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US 2026/0314014 A1Published application
Method of forming a nano-fet semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLi-Chi Yu, Cheng-I Chu, Chia-Hsuan Wang, Chen-Fong Tsai, Huicheng Chang, Yee-Chia Yeo
Life of this patent
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Abstract
Embodiments include nanostructure devices and methods of forming nanostructure devices which include a treatment process to expand a sidewall spacer material to close a seam in the sidewall spacer material after deposition. The treatment process includes oxygen plasma treatment to expand the sidewall spacer material and crosslink the open seam to form a closed seam, lower k-value, and decrease density.
Claims20
A device comprising:
- a first nanostructure;
- a second nanostructure over the first nanostructure;
- a source/drain region adjacent the first nanostructure;
- a gate structure surrounding the first nanostructure and the second nanostructure;
- and
- a first inner spacer interposed between the first nanostructure and the second nanostructure, the first inner spacer interposed between the gate structure and the source/drain region, the first inner spacer having high oxidation on a first side of the first inner spacer, an intensity of oxidation decreasing by a parabolic gradient curve until reaching a second side of the first inner spacer, the first side of the first inner spacer contacting the source/drain region.
3 more elements
A transistor comprising:
- a first nanostructure over a semiconductor substrate, the first nanostructure including a first end;
- a second nanostructure over the first nanostructure, the second nanostructure including a second end;
- a spacer interposed between the first end and the second end;
- and
- a source/drain region interfacing the first end, the second end, and a first side of the spacer, wherein an oxygen content gradient of the spacer decreases parabolically from the first side of the spacer in a first direction parallel to a length of the first nanostructure.
2 more elements
A transistor comprising:
- a first nanostructure;
- a second nanostructure over the first nanostructure;
- a third nanostructure over the second nanostructure;
- a sidewall spacer between the first nanostructure and the second nanostructure, wherein a concentration profile of oxygen in single material layer of the sidewall spacer decreases from a first side to a second side of the single material layer of the sidewall spacer;
- and
- a source/drain region contacting the first nanostructure and the third nanostructure in a first recess.
3 more elements
Dependencies are inferred from the claim text.