US 6,884,712 B2 · Method of manufacturing semiconductor local interconnect and contact

Abstract

An integrated circuit, and manufacturing method therefor, is provided. A gate dielectric and a gate are provided respectively on and over a semiconductor substrate. A junction is formed adjacent the gate dielectric and a shaped spacer is formed around the gate. A spacer is formed under the shaped spacer and a liner is formed under the spacer. A first dielectric layer is formed over the semiconductor substrate, the shaped spacer, the spacer, the liner, and the gate. A second dielectric layer is formed over the first dielectric layer. A local interconnect opening is formed in the second dielectric layer down to the first dielectric layer. The local interconnect opening in the first dielectric layer is opened to expose the junction in the semiconductor substrate and the first gate. The local interconnect openings in the first and second dielectric layers are filled with a conductive material.

Claims10

Dependent claims

A method for manufacturing an integrated circuit comprising:

providing a semiconductor substrate having a first gate dielectric and a first gate respectively on and over the semiconductor substrate;
forming a junction in the semiconductor substrate adjacent the first gate dielectric;
forming a first shaped spacer around the first gate;
forming a first spacer under the first shaped spacer;
forming a first liner under the first spacer over the semiconductor substrate;
forming a first dielectric layer over the semiconductor substrate and the first gate;
forming a second dielectric layer over the first dielectric layer;
forming a local interconnect opening in the second dielectric layer to the first dielectric layer;
opening a local interconnect opening in the first dielectric layer exposing the first gate and the junction in the semiconductor substrate;
and
depositing a conductive material in the local interconnect openings.

8 more elements

A method for manufacturing an integrated circuit comprising:

providing a semiconductor substrate having a first gate dielectric and a first gate respectively on and over the semiconductor substrate;
forming a source/drain junction in the semiconductor substrate adjacent the gate dielectric;
depositing a liner layer over the semiconductor substrate and on the first gate;
depositing a spacer layer over the liner layer;
depositing a shaped spacer layer over the spacer layer;
forming a first shaped spacer from the shaped spacer layer on the spacer layer;
forming a first L-shaped spacer from the spacer layer on the liner layer around the first gate;
forming a first L-shaped liner around the first gate from the liner layer;
forming a first dielectric layer over the semiconductor substrate, the first L-shaped liner, the first L-shaped spacer, the first shaped spacer, and the first gate;
forming a second dielectric layer over the first dielectric layer;
forming a local interconnect opening in the second dielectric layer down to the first dielectric layer;
opening a local interconnect opening in the first dielectric layer exposing the first gate and the source/drain junction in the semiconductor substrate;
and
depositing a conductive material in the local interconnect opening in the second dielectric layer and in the local interconnect opening in the first dielectric layer.

11 more elements

Dependencies are inferred from the claim text.

Method of manufacturing semiconductor local interconnect and contact

Life of this patent

Method of manufacturing semiconductor local interconnect and contact

Life of this patent

Abstract

Claims10