H10D 84/0128
Manufacturing their channels
Official title: {Manufacturing their channels}
H10D84/0128 (Manufacturing their channels) appears on 3,129 US grants and 4,028 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,129
- Published applications
- 4,028
- Assignees
- 328
- Inventors
- 4,345
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 3 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 8 | 0 |
| 1999 | 7 | 0 |
| 2000 | 17 | 0 |
| 2001 | 19 | 12 |
| 2002 | 24 | 29 |
| 2003 | 22 | 39 |
| 2004 | 29 | 55 |
| 2005 | 32 | 62 |
| 2006 | 35 | 72 |
| 2007 | 46 | 88 |
| 2008 | 53 | 101 |
| 2009 | 50 | 89 |
| 2010 | 71 | 72 |
| 2011 | 94 | 77 |
| 2012 | 52 | 97 |
| 2013 | 108 | 104 |
| 2014 | 110 | 135 |
| 2015 | 145 | 146 |
| 2016 | 174 | 183 |
| 2017 | 191 | 203 |
| 2018 | 200 | 183 |
| 2019 | 200 | 180 |
| 2020 | 168 | 263 |
| 2021 | 192 | 236 |
| 2022 | 192 | 278 |
| 2023 | 193 | 394 |
| 2024 | 228 | 353 |
| 2025 | 292 | 389 |
| 2026 | 160 | 188 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Contact formation with staggered gate patterning6 Oct 2026US 12,757,441 B2International Business Machines Corporation
- Co-integration of S/D metal contact cut and wrap-around-contact6 Oct 2026US 12,757,445 B2International Business Machines Corporation
- Alignment mark for back side power connections6 Oct 2026US 12,757,704 B2International Business Machines Corporation
- Semiconductor source/drain regions comprising multi-layers with different dopant concentrations and methods of forming the same29 Sep 2026US 12,751,056 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor structure with gate isolation structures and method of fabricating thereof29 Sep 2026US 12,751,057 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Dislocations in gaa transistors and the methods of forming the same8 Oct 2026US 2026/0313972 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor Including Dielectric Barrier And Manufacturing Method Thereof8 Oct 2026US 2026/0313981 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for forming the same8 Oct 2026US 2026/0314000 A1National Taiwan University
- Method of forming a nano-fet semiconductor device8 Oct 2026US 2026/0314014 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit device8 Oct 2026US 2026/0314048 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure496US 8,129,290 B2APPLIED Materials.Inc. · 2012
- FinFETs with strained well regions301US 9,601,342 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Method of IC production using corrugated substrate264US 7,265,008 B2Synopsys, Inc. · 2007