Semiconductor device and method for forming the same
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsShih-Yen LIN, Po-Cheng TSAI
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate. A 2-D material channel layer is over the substrate, in which the 2-D material channel layer includes a channel region and source/drain regions on opposite sides of the channel region. Source/drain metals are over of the source/drain regions of the 2-D material channel layer. A gate metal is over the substrate and non-overlapping the 2-D material channel layer along a vertical direction, in which the gate metal is laterally separated from the 2-D material channel layer by an air gap.
Claims20
A semiconductor device, comprising:
- a substrate;
- a 2-D material channel layer over the substrate, wherein the 2-D material channel layer comprises a channel region and source/drain regions on opposite sides of the channel region;
- source/drain metals over of the source/drain regions of the 2-D material channel layer;
- and
- a gate metal over the substrate and non-overlapping the 2-D material channel layer along a vertical direction, wherein the gate metal is laterally separated from the 2-D material channel layer by an air gap.
A semiconductor device, comprising:
- a substrate;
- a 2-D material channel layer over the substrate, wherein the 2-D material channel layer comprises a channel region and source/drain regions on opposite sides of the channel region;
- a 2-D material passivation layer having a first portion covering a top surface of the 2-D material channel layer;
- source/drain contact electrodes over of the source/drain regions of the 2-D material channel layer;
- and
- a gate contact electrode over the substrate and non-overlapping the 2-D material channel layer along a vertical direction.
A semiconductor device, comprising:
- a 2-D material layer over a substrate;
- a gate contact electrode and source/drain contact electrodes over the 2-D material layer;
- and
- a gate metal extending from a top surface of the gate contact electrode to a sidewall of the gate contact electrode, wherein in a first cross-sectional view, a channel region of the 2-D material layer is laterally separated from the gate contact electrode and the gate metal, wherein a lateral distance between the gate metal and the channel region of the 2-D material layer is less than a lateral distance between the gate contact electrode and the channel region of the 2-D material layer.
Dependencies are inferred from the claim text.