H10D 84/0135
Manufacturing their gate conductors
Official title: {Manufacturing their gate conductors}
H10D84/0135 (Manufacturing their gate conductors) appears on 5,257 US grants and 6,061 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,257
- Published applications
- 6,061
- Assignees
- 449
- Inventors
- 6,505
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 4 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 5 | 0 |
| 1994 | 4 | 0 |
| 1995 | 2 | 0 |
| 1996 | 5 | 0 |
| 1997 | 8 | 0 |
| 1998 | 11 | 0 |
| 1999 | 28 | 0 |
| 2000 | 55 | 0 |
| 2001 | 64 | 23 |
| 2002 | 57 | 56 |
| 2003 | 57 | 55 |
| 2004 | 64 | 71 |
| 2005 | 50 | 112 |
| 2006 | 84 | 120 |
| 2007 | 60 | 146 |
| 2008 | 79 | 157 |
| 2009 | 79 | 144 |
| 2010 | 115 | 117 |
| 2011 | 129 | 106 |
| 2012 | 93 | 131 |
| 2013 | 120 | 128 |
| 2014 | 143 | 165 |
| 2015 | 200 | 270 |
| 2016 | 299 | 304 |
| 2017 | 344 | 346 |
| 2018 | 369 | 363 |
| 2019 | 403 | 406 |
| 2020 | 418 | 513 |
| 2021 | 370 | 392 |
| 2022 | 330 | 472 |
| 2023 | 312 | 421 |
| 2024 | 368 | 407 |
| 2025 | 367 | 433 |
| 2026 | 148 | 203 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- 3D-stacked semiconductor device having different channel and gate dimensions across lower stack and upper stack6 Oct 2026US 12,757,455 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,481 B2Renesas Electronics Corporation
- Semiconductor device and manufacturing method thereof22 Sep 2026US 12,745,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Threshold voltage modulation by gate height variation22 Sep 2026US 12,745,430 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor memory device including buried gate pattern15 Sep 2026US 12,740,048 B2Samsung Electronics Co., Ltd.
- Flash memory with improved gate structure and a method of creating the same8 Oct 2026US 2026/0313891 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure8 Oct 2026US 2026/0313931 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Forming isolation regions with low parasitic capacitance and reduced damage8 Oct 2026US 2026/0313971 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Cap for gate stack of multigate device8 Oct 2026US 2026/0314006 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Gate structure for semiconductor device8 Oct 2026US 2026/0314023 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of cutting metal gate3,322US 9,520,482 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Low capacitance junction-isolation for bulk FinFET technology538US 7,101,763 B1International Business Machines Corporation · 2006
- Method of trimming technology529US 7,354,847 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2008
- Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure496US 8,129,290 B2APPLIED Materials.Inc. · 2012