H10D 84/014
The gate conductors having different materials or different implants
Official title: {the gate conductors having different materials or different implants}
H10D84/014 (The gate conductors having different materials or different implants) appears on 1,024 US grants and 1,183 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,024
- Published applications
- 1,183
- Assignees
- 171
- Inventors
- 1,801
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 4 | 0 |
| 2000 | 19 | 0 |
| 2001 | 27 | 8 |
| 2002 | 17 | 14 |
| 2003 | 16 | 18 |
| 2004 | 20 | 15 |
| 2005 | 8 | 25 |
| 2006 | 20 | 26 |
| 2007 | 12 | 26 |
| 2008 | 19 | 33 |
| 2009 | 12 | 32 |
| 2010 | 25 | 29 |
| 2011 | 24 | 24 |
| 2012 | 22 | 23 |
| 2013 | 20 | 34 |
| 2014 | 37 | 31 |
| 2015 | 28 | 46 |
| 2016 | 52 | 52 |
| 2017 | 60 | 61 |
| 2018 | 52 | 59 |
| 2019 | 67 | 76 |
| 2020 | 78 | 101 |
| 2021 | 63 | 81 |
| 2022 | 85 | 102 |
| 2023 | 60 | 78 |
| 2024 | 80 | 76 |
| 2025 | 68 | 72 |
| 2026 | 27 | 41 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Cap for gate stack of multigate device8 Oct 2026US 2026/0314006 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Field effect transistor threshold voltage tuning through fluorine doping of gate stack1 Oct 2026US 2026/0304926 A1Intel Corporation
- Semiconductor device24 Sep 2026US 2026/0293298 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method of fabricating the same17 Sep 2026US 2026/0282526 A1Samsung Electronics Co., Ltd.
- Gate structures17 Sep 2026US 2026/0282528 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure496US 8,129,290 B2APPLIED Materials.Inc. · 2012
- Integrated circuit having multiple threshold voltages428US 9,362,180 B2Globalfoundries Inc. · 2016
- Integrated circuits with varying gate structures and fabrication methods425US 9,576,952 B2Globalfoundries Inc. · 2017
- Method for manufacturing a semiconductor device comprising transistors each having a different effective work function423US 9,287,273 B2Imec Vzw · 2016
- MOS transistor with dual metal gate structure177US 6,066,533 AAdvanced Micro Devices, Inc. · 2000