Semiconductor device structure with gate dielectric layer and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Chih Kao, Hsin-Che Chiang, Jeng-Ya Yeh
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Abstract
A method for forming a semiconductor device structure is provided. The method includes forming an isolation layer over a substrate. The method includes forming a spacer layer over the first fin, the second fin, and the isolation layer. The method includes forming a gate dielectric layer in the first trench and covering the first fin, the second fin, and the isolation layer exposed by the first trench. The method includes partially removing the gate dielectric layer to form a second trench in the gate dielectric layer and between the first fin and the second fin. The method includes forming a gate electrode in the first trench of the spacer layer and over the gate dielectric layer.
Claims20
A method for forming a semiconductor device structure, comprising:
- forming an isolation layer over a substrate, wherein the substrate has a base, a first fin, and a second fin over the base, the isolation layer is over the base, and the first fin and the second fin are partially in the isolation layer;
- forming a spacer layer over the first fin, the second fin, and the isolation layer, wherein the spacer layer has a first trench partially exposing the first fin and the second fin;
- forming a gate dielectric layer in the first trench and covering the first fin, the second fin, and the isolation layer exposed by the first trench;
- partially removing the gate dielectric layer to form a second trench in the gate dielectric layer and between the first fin and the second fin, wherein the gate dielectric layer is divided into a first part and a second part by the second trench, the gate dielectric layer has a thinner portion between a bottom of the second trench and the isolation layer, and the thinner portion links the first part and the second part;
- and
- forming a gate electrode in the first trench of the spacer layer and over the gate dielectric layer, wherein the gate electrode extends along a top of the thinner portion.
A method for forming a semiconductor device structure, comprising:
- providing a substrate having a base, a first fin, and a second fin over the base;
- forming a spacer layer over the first fin, the second fin, and the base, wherein the spacer layer has a first trench partially exposing the first fin and the second fin;
- forming a gate dielectric layer in the first trench and covering the first fin, the second fin, and the base under the first trench;
- partially removing the gate dielectric layer to form a second trench in the gate dielectric layer and between the first fin and the second fin, wherein a first portion of the gate dielectric layer under the second trench is thinner than a second portion of the gate dielectric layer covering the first fin;
- and
- forming a gate electrode in the first trench of the spacer layer and over the gate dielectric layer, wherein the gate electrode covers the first portion of the gate dielectric layer.
A method for forming a semiconductor device structure, comprising:
- forming a first channel structure and a second channel structure over a substrate;
- forming an isolation structure over the substrate, wherein a portion of the isolation structure is laterally between the first channel structure and the second channel structure;
- forming a gate dielectric layer extending over sidewalls of the first channel structure and the second channel structure and the portion of the isolation structure;
- partially removing the gate dielectric layer to form a trench extending towards the substrate, wherein the trench is over the portion of the isolation structure, and a thinner portion of the gate dielectric layer is between a bottom of the trench and the portion of the isolation structure;
- and
- forming a gate electrode over the gate dielectric layer to cover the thinner portion of the gate dielectric layer after the trench is formed.
Dependencies are inferred from the claim text.