H10D 84/0142
The gate conductors having different shapes or dimensions
Official title: {the gate conductors having different shapes or dimensions}
H10D84/0142 (The gate conductors having different shapes or dimensions) appears on 1,390 US grants and 1,672 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,390
- Published applications
- 1,672
- Assignees
- 213
- Inventors
- 2,514
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 4 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 6 | 0 |
| 1999 | 9 | 0 |
| 2000 | 13 | 0 |
| 2001 | 10 | 5 |
| 2002 | 8 | 18 |
| 2003 | 14 | 8 |
| 2004 | 20 | 22 |
| 2005 | 13 | 24 |
| 2006 | 20 | 30 |
| 2007 | 9 | 41 |
| 2008 | 19 | 44 |
| 2009 | 25 | 42 |
| 2010 | 30 | 42 |
| 2011 | 39 | 37 |
| 2012 | 39 | 45 |
| 2013 | 43 | 40 |
| 2014 | 39 | 53 |
| 2015 | 70 | 69 |
| 2016 | 69 | 68 |
| 2017 | 75 | 99 |
| 2018 | 95 | 97 |
| 2019 | 105 | 96 |
| 2020 | 96 | 108 |
| 2021 | 95 | 85 |
| 2022 | 72 | 138 |
| 2023 | 76 | 138 |
| 2024 | 94 | 128 |
| 2025 | 124 | 129 |
| 2026 | 43 | 66 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- 3D-stacked semiconductor device having different channel and gate dimensions across lower stack and upper stack6 Oct 2026US 12,757,455 B2Samsung Electronics Co., Ltd.
- Threshold voltage modulation by gate height variation22 Sep 2026US 12,745,430 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Manufacturing method of semiconductor structure15 Sep 2026US 12,740,134 B2Powerchip Semiconductor Manufacturing Corporation
- Replacement gate process for semiconductor devices1 Sep 2026US 12,727,410 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Forming NS gates with improved mechanical stability25 Aug 2026US 12,720,836 B2International Business Machines Corporation
- Flash memory with improved gate structure and a method of creating the same8 Oct 2026US 2026/0313891 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof1 Oct 2026US 2026/0304931 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Device structure and method for manufacturing the same24 Sep 2026US 2026/0293274 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and manufacturing method thereof24 Sep 2026US 2026/0293295 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-gate transistor24 Sep 2026US 2026/0293297 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Integrated circuit cells213US 6,954,918 B2Texas Instruments Incorporated · 2005
- Semiconductor device, module, and electronic device including a conversion circuit having a second switch rendered conductive together with a first switch155US 7,608,810 B2Rohm Co., Ltd. · 2009
- Method for forming stacked nanowire transistors153US 10,032,627 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018
- Threshold voltage adjustment for a gate-all-around semiconductor structure133US 10,290,546 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2019
- Semiconductor device and its manufacture method121US 7,323,754 B2Fujitsu Limited · 2008