Semiconductor structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMao-Lin HUANG, Li-Yang CHUANG, Hsin-Jung LEE, Chia-Cheng TSAI, Kuo-Cheng CHIANG, Chih-Hao WANG
Life of this patent
Estimating the term…
Abstract
According to the present disclosure, a semiconductor structure includes a plurality of first active channels vertically stacked to each other and a plurality of second active channels vertically stacked to each other. In an embodiment, the number of the first active channels and the number of the second active channels are different. As a result, the effective capacitance may be decreased to lead to power efficiency improvement by hybrid sheet approach.
Claims20
A manufacturing method for a semiconductor structure, comprising:
- forming a plurality of first active channels on a substrate, wherein the first active channels are vertically stacked to each other;
- forming a plurality of second active channels on the substrate, wherein the second active channels are vertically stacked to each other;
- forming a liner over the first active channels and the second active channels;
- removing a portion of the liner to expose the topmost first active channel;
- and
- removing the topmost two first active channels.
A semiconductor structure, comprising:
- a substrate comprising a first protrusion, a second protrusion and a trench, wherein the trench is located between the first protrusion and the second protrusion;
- a shallow trench isolation (STI) in the trench;
- a plurality of first active channels on the first protrusion and vertically stacked to each other;
- and
- a plurality of second active channels on the second protrusion and vertically stacked to each other;
- wherein the number of the first active channels and the number of the second active channels are different.
A manufacturing method for a semiconductor structure, comprising:
- forming a plurality of first active channels on a substrate, wherein the first active channels are vertically stacked to each other;
- and
- forming a plurality of second active channels on the substrate, wherein the second active channels are vertically stacked to each other;
- wherein the number of the first active channels and the number of the second active channels are different.
Dependencies are inferred from the claim text.