Device structure and method for manufacturing the same

A device structure comprising:

• a substrate;
• a channel structure disposed on the substrate and elongated in a first direction;
• a first gate structure formed on the channel structure and elongated in a second direction different from the first direction;
• a second gate structure formed on the channel structure and elongated in the second direction;
• a first dielectric wall formed at first sides of the first gate structure and the second gate structure, and elongated in the first direction,
• a second dielectric wall formed at second sides of the first gate structure and the second gate structure, and elongated in the first direction, and
• a plurality of dielectric portions, at least one of the plurality of dielectric portions extending from the first dielectric wall in the second direction to connect the first side of the first gate structure or the second gate structure.

A method for manufacturing a device structure, comprising:

• forming a channel structure on a substrate, the channel structure being elongated in a first direction;
• performing a gate replacement process so as to form a gate structure on the fin structure, the gate structure being elongated in a second direction transverse to the first direction to terminate at two opposite ends;
• forming gate spacers which are spaced apart from each other in the first direction such that after the gate replacement process, the gate spacers are respectively disposed on two sides of the gate structure, and which are elongated in the second direction;
• performing a patterning operation to remove a first part and a second part of the gate structure to form a first trench and a second trench and to leave a main part of the gate structure, the first part and the second part of the gate structure being opposite to each other in the second direction;
• and
• forming a first dielectric wall in the first trench, and forming a second dielectric wall in the second trench.