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US 12,740,134 B2Granted
Manufacturing method of semiconductor structure
AssigneePowerchip Semiconductor Manufacturing Corporation
InventorMeng-Han Lin
Life of this patent
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Abstract
A manufacturing method of a semiconductor structure including the following steps is provided. A substrate is provided. A semiconductor layer is formed in the substrate. A portion of the semiconductor layer and a portion of the substrate are removed to form a trench in the substrate. An isolation structure is formed in the trench. After the isolation structure is formed, the semiconductor layer is removed to form a first recess in the substrate. A gate dielectric layer is formed on the substrate exposed by the first recess.
Claims20
A manufacturing method of a semiconductor structure, comprising:
- providing a substrate;
- forming a semiconductor layer in the substrate;
- removing a portion of the semiconductor layer and a portion of the substrate to form a trench in the substrate;
- forming an isolation structure in the trench;
- after forming the isolation structure, removing the semiconductor layer to form a first recess in the substrate;
- and
- forming a gate dielectric layer on the substrate exposed by the first recess.
4 more elements
Dependencies are inferred from the claim text.