H10D 84/0137
The gate conductors being silicided
Official title: {the gate conductors being silicided}
H10D84/0137 (The gate conductors being silicided) appears on 284 US grants and 270 published applications in this corpus.
Search patents in H10D- Granted patents
- 284
- Published applications
- 270
- Assignees
- 95
- Inventors
- 604
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 3 | 0 |
| 1997 | 5 | 0 |
| 1998 | 2 | 0 |
| 1999 | 14 | 0 |
| 2000 | 14 | 0 |
| 2001 | 28 | 4 |
| 2002 | 13 | 8 |
| 2003 | 9 | 10 |
| 2004 | 9 | 13 |
| 2005 | 7 | 11 |
| 2006 | 7 | 19 |
| 2007 | 11 | 37 |
| 2008 | 12 | 23 |
| 2009 | 14 | 14 |
| 2010 | 15 | 5 |
| 2011 | 7 | 6 |
| 2012 | 7 | 7 |
| 2013 | 8 | 12 |
| 2014 | 11 | 12 |
| 2015 | 14 | 12 |
| 2016 | 13 | 10 |
| 2017 | 4 | 4 |
| 2018 | 7 | 5 |
| 2019 | 5 | 2 |
| 2020 | 4 | 8 |
| 2021 | 5 | 15 |
| 2022 | 11 | 13 |
| 2023 | 5 | 6 |
| 2024 | 9 | 6 |
| 2025 | 8 | 4 |
| 2026 | 3 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and manufacturing method thereof22 Sep 2026US 12,745,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Flash memory with improved gate structure and a method of creating the same14 Jul 2026US 12,684,768 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof6 Jan 2026US 12,520,531 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Small grain size polysilicon engineering for threshold voltage mismatch improvement30 Dec 2025US 12,512,322 B2Texas Instruments Incorporated
- Method for fabricating a semiconductor device including a MOS transistor having a silicide layer18 Nov 2025US 12,476,112 B2SK hynix Inc.
- Flash memory with improved gate structure and a method of creating the same8 Oct 2026US 2026/0313891 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure and methods of forming the same8 Oct 2026US 2026/0314053 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof26 Mar 2026US 2026/0090026 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Small grain size polysilicon engineering for threshold voltage mismatch improvement26 Mar 2026US 2026/0090050 A1
- Semiconductor device and manufacturing method thereof27 Nov 2025US 2025/0366051 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Low mask count self-aligned silicided CMOS transistors with a high electrostatic discharge resistance370US 5,897,348 ATexas Instruments - Acer Incorporated · 1999
- Semiconductor chip having fieldless array with salicide gates and methods for making same113US 6,174,758 B1Tower Semiconductor Ltd. · 2001
- Semiconductor device with improved salicide structure and a method of manufacturing the same83US 5,739,573 ANEC Corporation · 1998
- Method for fabricating MOS transistor using selective silicide process76US 6,383,882 B1Samsung Electronics Co., Ltd. · 2002
- Field effect transistor devices having thick gate dielectric layers and thin gate dielectric layers63US 8,492,228 B1International Business Machines Corporation · 2013