H10D 84/0144
Manufacturing their gate insulating layers
Official title: {Manufacturing their gate insulating layers}
H10D84/0144 (Manufacturing their gate insulating layers) appears on 2,168 US grants and 2,503 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,168
- Published applications
- 2,503
- Assignees
- 324
- Inventors
- 3,624
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 4 | 0 |
| 1995 | 1 | 0 |
| 1996 | 7 | 0 |
| 1997 | 6 | 0 |
| 1998 | 6 | 0 |
| 1999 | 15 | 0 |
| 2000 | 38 | 0 |
| 2001 | 51 | 21 |
| 2002 | 58 | 75 |
| 2003 | 55 | 54 |
| 2004 | 65 | 93 |
| 2005 | 57 | 97 |
| 2006 | 58 | 96 |
| 2007 | 61 | 86 |
| 2008 | 56 | 80 |
| 2009 | 61 | 58 |
| 2010 | 55 | 72 |
| 2011 | 65 | 55 |
| 2012 | 49 | 57 |
| 2013 | 64 | 52 |
| 2014 | 65 | 85 |
| 2015 | 73 | 80 |
| 2016 | 90 | 117 |
| 2017 | 113 | 133 |
| 2018 | 114 | 103 |
| 2019 | 134 | 137 |
| 2020 | 115 | 132 |
| 2021 | 114 | 145 |
| 2022 | 101 | 145 |
| 2023 | 117 | 168 |
| 2024 | 114 | 135 |
| 2025 | 129 | 143 |
| 2026 | 46 | 84 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor memory device including buried gate pattern15 Sep 2026US 12,740,048 B2Samsung Electronics Co., Ltd.
- Manufacturing method of semiconductor structure15 Sep 2026US 12,740,134 B2Powerchip Semiconductor Manufacturing Corporation
- Semiconductor device structure having gate dielectric layers with different dielectric compositions and method of forming the same15 Sep 2026US 12,740,136 B2Mediatek Inc.
- Controlled doping in a gate dielectric layer1 Sep 2026US 12,727,186 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with supporting structures and method for forming the same25 Aug 2026US 12,720,846 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Flash memory with improved gate structure and a method of creating the same8 Oct 2026US 2026/0313891 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Controlled doping in a gate dielectric layer8 Oct 2026US 2026/0313932 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices with bonding layers8 Oct 2026US 2026/0313989 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and methods of forming the same8 Oct 2026US 2026/0314045 A1
- Methods of forming gate-all-around (gaa) devices1 Oct 2026US 2026/0304842 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Precursor source mixtures666US 6,984,591 B1International Business Machines Corporation · 2006
- Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same426US 10,106,892 B1Globalfoundries Inc. · 2018
- Process for forming gate oxides possessing different thicknesses on a semiconductor substrate214US 5,918,116 ALucent Technologies Inc. · 1999
- Method for making a dual-thickness gate oxide layer using a nitride/oxide composite region193US 5,960,289 AMotorola, Inc. · 1999
- Method for forming stacked nanowire transistors153US 10,032,627 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018