Semiconductor devices with bonding layers
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWan Chen HSIEH, Zhen-Cheng WU
Life of this patent
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Abstract
A method includes the following steps. A transistor including a first gate structure is formed on a first substrate. A first dielectric layer is deposited over the transistor using plasma enhanced atomic layer deposition (PEALD). A multilayer stack is formed on a second substrate. The multilayer stack comprises alternately stacked semiconductor layers and sacrificial layers. A second dielectric layer is deposited over the multilayer stack using a plasma enhanced atomic layer deposition (PEALD). The second dielectric layer is bonded with the first dielectric layer. The sacrificial layers are replaced with a second gate structure.
Claims20
A semiconductor device, comprising:
- first semiconductor channels extending in a first direction above a first substrate;
- a first gate wrapping around the first semiconductor channels;
- a first dielectric layer over the first gate, wherein the first dielectric layer has a top portion and a bottom portion having different compositions;
- a second dielectric layer in contact with the first dielectric layer;
- second semiconductor channels extending in the first direction above the first substrate;
- and
- a second gate wrapping around the second semiconductor channels.
A semiconductor device, comprising:
- first semiconductor channels extending in a first direction above a first substrate;
- a first gate wrapping around the first semiconductor channels;
- a first dielectric layer over the first gate;
- a second dielectric layer in contact with the first dielectric layer, wherein the second dielectric layer has a top portion and a bottom portion having different compositions;
- second semiconductor channels extending in the first direction above the second dielectric layer;
- and
- a second gate wrapping around the second semiconductor channels.
A semiconductor device, comprising:
- first semiconductor channels extending in a first direction above a first substrate;
- a first gate wrapping around the first semiconductor channels;
- a first dielectric layer over the first gate, wherein the first dielectric layer has an oxygen concentration gradient or a nitrogen concentration gradient;
- a second dielectric layer in contact with the first dielectric layer;
- second semiconductor channels extending in the first direction above the first substrate;
- and
- a second gate wrapping around the second semiconductor channels.
Dependencies are inferred from the claim text.