H10D 84/016
The components including vertical igfets
Official title: {the components including vertical IGFETs}
H10D84/016 (The components including vertical igfets) appears on 1,526 US grants and 1,585 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,526
- Published applications
- 1,585
- Assignees
- 243
- Inventors
- 1,671
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 3 | 0 |
| 2000 | 5 | 0 |
| 2001 | 5 | 3 |
| 2002 | 7 | 20 |
| 2003 | 13 | 24 |
| 2004 | 25 | 22 |
| 2005 | 14 | 26 |
| 2006 | 14 | 24 |
| 2007 | 13 | 29 |
| 2008 | 25 | 25 |
| 2009 | 17 | 33 |
| 2010 | 27 | 39 |
| 2011 | 36 | 36 |
| 2012 | 35 | 58 |
| 2013 | 60 | 54 |
| 2014 | 43 | 52 |
| 2015 | 64 | 77 |
| 2016 | 78 | 89 |
| 2017 | 109 | 107 |
| 2018 | 156 | 184 |
| 2019 | 166 | 138 |
| 2020 | 170 | 184 |
| 2021 | 145 | 105 |
| 2022 | 81 | 80 |
| 2023 | 77 | 79 |
| 2024 | 53 | 54 |
| 2025 | 53 | 28 |
| 2026 | 22 | 15 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Integrated circuits having heterogeneous devices therein and methods of designing the same4 Aug 2026US 12,701,785 B2Samsung Electronics Co., Ltd.
- Semiconductor devices having vertical field effect transistors7 Jul 2026US 12,677,464 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Buried source line structure for boosting read scheme26 May 2026US 12,640,171 B2SanDisk Technologies LLC
- Reduction of middle-of-line resistance and capacitance26 May 2026US 12,642,080 B2International Business Machines Corporation
- Semiconductor devices having vertical field effect transistors1 Oct 2026US 2026/0304893 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Vertical transistor including gate insulating layer and manufacturing method thereof23 Jul 2026US 2026/0214990 A1Unist (Ulsan National Institute of Science and Technology)
- Vertical fin-based field effect transistor (finfet) with varying conductivity regions25 Jun 2026US 2026/0182011 A1Semiconductor Components Industries, LLC
- Forming self-aligned vias and air-gaps in semiconductor fabrication25 Jun 2026US 2026/0182325 A1Adeia Semiconductor Solutions LLC
- Vertical field effect transistors and methods for forming the same11 Jun 2026US 2026/0164669 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999
- Semiconductor memory device266US 7,867,822 B22011
- Power semiconductor devices having trench-based gate electrodes and field plates232US 6,388,286 B1North Carolina State University · 2002
- Method of making a transistor having easily controllable impurity profile166US 5,545,586 ANEC Corporation · 1996
- Diffused bitline replacement in stacked wafer memory162US 10,854,578 B2Invensas Corporation · 2020