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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsGao-Ming WU, Li-Shyue LAI, Katherine H. CHIANG, Chung-Te LIN
Estimating the term…
A plurality of vertical stacks may be formed over a substrate. Each of the vertical stacks includes, from bottom to top, a bottom electrode, a dielectric pillar, and a top electrode. A continuous active layer and a gate dielectric layer may be formed over the plurality of vertical stacks. Sacrificial spacers are formed around the plurality of vertical stacks. At least one dielectric wall structure may be formed around the sacrificial spacers by filling gaps between neighboring pairs of the sacrificial spacers with a dielectric fill material. The sacrificial spacers are replaced with gate electrodes. Each of the gate electrodes may laterally surround a respective row of vertical stacks that are arranged along a first horizontal direction.
A semiconductor structure comprising:
The semiconductor structure of 1, wherein the active layer comprises:
The semiconductor structure of 1, further comprising dielectric wall structures interlaced with the gate stacks overlaying the active layers over the sidewalls of the two-dimensional array of vertical stacks along the second horizontal direction.
The semiconductor structure of 3, wherein a sidewall of the dielectric wall structures comprises a continuously extending vertical segment that laterally extends along the first horizontal direction.
The semiconductor structure of 4, wherein the continuously extending vertical segment is equidistant from a most proximal sidewall among sidewalls of a respective row of top electrodes that are arranged along the first horizontal direction.
The semiconductor structure of 3, wherein the dielectric wall structures vertically extend from a first horizontal plane including top surfaces of the gate electrode at least to a second horizontal plane including a bottom surface of the bottom electrode.
The semiconductor structure of 3, wherein each continuously extending vertical segment of the sidewall of the dielectric wall structures comprises laterally straight segments that are parallel to the first horizontal direction, and pairs of laterally concave segments that are adjoined to each other and located between a respective neighboring pair of laterally straight segments.
A semiconductor structure comprising:
The semiconductor structure of 8, wherein the active layer comprises:
The semiconductor structure of 8, wherein a sidewall of the dielectric wall structure comprises vertically straight and laterally concave surface segments.
The semiconductor structure of 10, wherein the vertically straight and laterally concave surface segments are equidistant from a most proximal sidewall among sidewalls of a respective row of top electrodes that are arranged along the first horizontal direction.
The semiconductor structure of 8, wherein the dielectric wall structure comprises recess regions through which connection portions of the gate electrodes laterally extend along the first horizontal direction.
The semiconductor structure of 12, wherein top surfaces of the connection portions of the gate electrodes are located within a same horizontal plane as top surfaces of the dielectric wall structure.
The semiconductor structure of 12, wherein the dielectric wall structure vertically extends from a first horizontal plane including a top surface of the gate electrode at least to a second horizontal plane including a bottom surface of the bottom electrode in an area of the dielectric wall structure located outside areas of the connection portions of the gate electrode.
A semiconductor structure comprising:
The semiconductor structure of 15, wherein the active layer comprises:
The semiconductor structure of 15, further comprising dielectric wall structures interlaced with the gate stacks overlaying the active layers over the sidewalls of the two-dimensional array of vertical stacks along the second horizontal direction.
The semiconductor structure of 17, wherein the sidewall of the dielectric wall structures comprises a continuously extending vertical segment that laterally extends along the first horizontal direction and equidistant from a most proximal sidewall among sidewall among sidewalls of a respective row of top electrodes that are arranged along the first horizontal direction.
The semiconductor structure of 17, wherein the dielectric wall structures comprises uniform width regions having a uniform width between a respective pair of straight sidewall segments that laterally extend along the first horizontal direction and laterally protruding regions that laterally protrude outward from vertical planes including the straight sidewall segments of the uniform width regions.
The semiconductor structure of 19, wherein a difference between the second pitch and the first pitch is greater than the uniform width of the uniform width regions.
Dependencies are inferred from the claim text.