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US 7,867,822 B2Granted
Semiconductor memory device
OwnerSang-Yun Leeinventor
Life of this patent
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Abstract
A method includes forming a switching device which includes a vertical channel spaced apart from a semiconductor substrate, and forming a storage device which is positioned on opposed sides of the switching device. The storage device includes a cylindrically shaped storage node, a plate electrode coupled to the storage node, and a dielectric film which is formed between the storage node and plate electrode, the storage nodes being electrically connected to the switching device.
Claims5
A method, comprising:
- forming a switching device which includes a vertical channel spaced from a semiconductor substrate;
- and
- forming first and second storage devices which are positioned on opposed sides of the switching device, wherein the storage devices each include a cylindrically shaped storage node, a plate electrode coupled to the storage node, and a dielectric film which is formed between the storage node and plate electrode, the storage nodes being electrically connected to the switching device.
Dependencies are inferred from the claim text.