Buried source line structure for boosting read scheme
AssigneeSanDisk Technologies LLC
InventorsKiyohiko Sakakibara, Ken Oowada
Life of this patent
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Abstract
A non-volatile memory device is provided that includes an alternating stack of conducting layers and dielectric layers, a charge trap layer, a layer of polysilicon, and a tunneling dielectric layer arranged between the charge trap layer and the layer of polysilicon. The charge trap layer extends through the alternating stack of conducting layers and dielectric layers. The layer of polysilicon includes a first portion having a first thickness and a second portion having a second thickness that is greater than the first thickness. The second portion is arranged below the alternating stack of conducting layers and dielectric layers.
Claims10
A non-volatile memory device comprising:
- an alternating stack of conducting layers and dielectric layers;
- a vertically-oriented memory hole extending through the alternating stack of conducting layers and dielectric layers;
- a set of memory element layers in the memory hole;
- a second hole extending through the memory element layers;
- and
- a layer of polysilicon disposed on sidewalls of the second hole,
- wherein the layer of polysilicon comprises a first portion having a first thickness and a second portion having a second thickness that is greater than the first thickness, the second portion disposed below the first portion.
A non-volatile memory device comprising:
- a memory hole extending through an alternating stack of conducting layers and dielectric layers;
- a first dielectric layer, a charge trap layer, and a tunneling dielectric layer disposed within the memory hole;
- a second hole extending through the tunneling dielectric layer, the charge trap layer, and the first dielectric layer;
- and
- a layer of polysilicon disposed within the second hole,
- wherein the layer of polysilicon comprises a first portion having a first thickness, and a second portion having a second thickness that is greater than the first thickness, the second portion comprising a first dopant.
Dependencies are inferred from the claim text.