H10D 84/0156
Manufacturing their doped wells
Official title: {Manufacturing their doped wells}
H10D84/0156 (Manufacturing their doped wells) appears on 626 US grants and 671 published applications in this corpus.
Search patents in H10D- Granted patents
- 626
- Published applications
- 671
- Assignees
- 172
- Inventors
- 1,061
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 5 | 0 |
| 2000 | 7 | 0 |
| 2001 | 11 | 0 |
| 2002 | 10 | 10 |
| 2003 | 7 | 11 |
| 2004 | 8 | 15 |
| 2005 | 12 | 9 |
| 2006 | 10 | 16 |
| 2007 | 10 | 16 |
| 2008 | 9 | 27 |
| 2009 | 20 | 14 |
| 2010 | 21 | 20 |
| 2011 | 17 | 20 |
| 2012 | 18 | 19 |
| 2013 | 19 | 26 |
| 2014 | 20 | 23 |
| 2015 | 31 | 31 |
| 2016 | 38 | 38 |
| 2017 | 30 | 35 |
| 2018 | 45 | 39 |
| 2019 | 45 | 48 |
| 2020 | 45 | 55 |
| 2021 | 53 | 45 |
| 2022 | 29 | 33 |
| 2023 | 28 | 34 |
| 2024 | 35 | 32 |
| 2025 | 22 | 34 |
| 2026 | 13 | 21 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,481 B2Renesas Electronics Corporation
- Manufacturing method of semiconductor structure15 Sep 2026US 12,740,134 B2Powerchip Semiconductor Manufacturing Corporation
- Method and structure for diodes with backside contacts8 Sep 2026US 12,733,188 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming alignment keys of semiconductor structure and semiconductor structure having alignment keys1 Sep 2026US 12,727,485 B2United Microelectronics Corp.
- Semiconductor device25 Aug 2026US 12,720,797 B2Renesas Electronics Corporation
- Integrated circuit device8 Oct 2026US 2026/0314081 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Avalanche photodiode with a diffused extension layer3 Sep 2026US 2026/0262281 A1Texas Instruments Incorporated
- Semiconductor wafer and device including impurity adsorption layer27 Aug 2026US 2026/0255896 A1SK keyfoundry Inc.
- Semiconductor device and manufacturing method thereof13 Aug 2026US 2026/0239716 A1Shanghai Huali Integrated Circuit Corporation
- Method for manufacturing semiconductor device13 Aug 2026US 2026/0239720 A1Shanghai Huali Integrated Circuit Corporation
Most cited
By later US patents
- Semiconductor device with improved noise resistivity164US 6,166,415 AMitsubishi Denki Kabushiki Kaisha · 2000
- Method for forming mosfet138US 6,274,444 B1United Microelectronics Corp. · 2001
- Semiconductor device and its manufacture method121US 7,323,754 B2Fujitsu Limited · 2008
- Semiconductor device and its manufacture method120US 7,605,041 B2Fujitsu Microelectronics Limited · 2009
- Method of fabricating semiconductor device with a high breakdown voltage between neighboring wells115US 8,148,774 B2Renesas Electronics Corporation · 2012