Integrated circuit device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Lin HSU, Yu-Ti SU
Life of this patent
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Abstract
An integrated circuit (IC) device includes a substrate, a first doped well over the substrate, a first diode over the substrate, a second diode over the substrate, a first electrical connection electrically coupling an anode or a cathode of the first diode to the first doped well, and a second electrical connection electrically coupling an anode or a cathode of the second diode to the substrate. The anodes of the first diode and the second diode are electrically coupled to each other, or the cathodes of the first diode and the second diode are electrically coupled to each other.
Claims20
An integrated circuit (IC) device, comprising:
- a substrate;
- a first doped well over the substrate;
- a first diode over the substrate;
- a second diode over the substrate;
- a first electrical connection electrically coupling an anode or a cathode of the first diode to the first doped well;
- and
- a second electrical connection electrically coupling an anode or a cathode of the second diode to the substrate,
- wherein
- the anodes of the first diode and the second diode are electrically coupled to each other, or
- the cathodes of the first diode and the second diode are electrically coupled to each other.
An integrated circuit (IC) device, comprising:
- a substrate;
- a first doped well over the substrate;
- a second doped well over the substrate, the second doped well different from the first doped well;
- a first gate over the first doped well;
- a first diode over the substrate;
- a second diode over the substrate;
- a first electrical connection electrically coupling an anode or a cathode of the first diode to the first doped well;
- a second electrical connection electrically coupling an anode or a cathode of the second diode to the substrate;
- and
- a third electrical connection electrically coupling the first gate over the first doped well to the second doped well,
- wherein the first electrical connection and the second electrical connection are below a highest metal layer containing a conductive pattern of the third electrical connection.
An integrated circuit (IC) device, comprising:
- a substrate;
- a first doped well over the substrate;
- a second doped well over the substrate, the second doped well different from the first doped well;
- a first gate over the first doped well;
- a first diode comprising a first P-N junction over the substrate;
- and
- a second diode comprising a second P-N junction over the substrate;
- wherein
- P-type regions of the first and second P-N junctions are electrically coupled to each other, or N-type regions of the first and second P-N junctions are electrically coupled to each other, and
- the first gate over the first doped well is electrically coupled to the second doped well.
Dependencies are inferred from the claim text.