Semiconductor device with improved noise resistivity
AssigneesMitsubishi Denki Kabushiki Kaisha, Mitsubishi Electric Engineering Company Limited
InventorsKazuhiro Sakemi, Shigeru Kikuda, Satoshi Kawasaki
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Abstract
A dummy pattern that is inserted to stabilize the form of a transistor active region is implanted with an impurity of the same conductivity type as a well, and the impurity-doped region of the dummy pattern is supplied with a potential through a metal interconnection. Hence, fluctuation of a well potential due to noise hardly occurs, and a semiconductor device enduring latch up, for example, to a greater extent can be provided.
Claims8
A semiconductor device formed on a main surface of a semiconductor substrate, comprising:
- a plurality of active regions where transistors are formed;
- an isolating region for electrically isolating said plurality of active regions;
- at least one dummy active region provided in a part of said isolating region having at least a prescribed width for keeping precision in forms of said plurality of active regions during a process of forming said isolating region;
- said dummy active region being isolated from said active regions by an isolating material filled in a trench formed in said semiconductor substrate;
- and
- an interconnection for electrically connecting said dummy active region to a prescribed internal node.
A semiconductor device formed on a main surface of a semiconductor substrate, comprising:
- a plurality of active regions where transistors are formed;
- a first isolating region for electrically isolating said active regions;
- at least one dummy active region, provided in a part of said first isolating region having at least a prescribed width, for keeping precision in forms of said active regions during a process of forming said isolating region;
- a pad for receiving a signal from the outside;
- internal circuitry for receiving said signal through said pad to perform a prescribed operation;
- a protection element for protecting said internal circuitry from a surge externally applied to said pad, said protection element including
- a well potion of a first conductivity type provided at said main surface,
- a first impurity-doped region of a second conductivity type provided at the surface of said well potion and electrically connected to said pad,
- a second impurity-doped region of said second conductivity type provided at the surface of said well potion and connected to a power supply node, and
- a second isolating region for isolating said first impunity-doped region from said second impurity-doped region.
Dependencies are inferred from the claim text.