Method and structure for diodes with backside contacts
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih Chieh Yeh, Ming-Shuan Li, Chih-Hung Wang, Zi-Ang Su
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Abstract
A semiconductor structure includes a first semiconductor layer having an upper portion over a lower portion, a source/drain feature over the upper portion of the first semiconductor layer, a first contact structure under the lower portion of the first semiconductor layer and electrically connected to the lower portion of the first semiconductor layer. The lower portion is more heavily doped with first dopants than the upper portion. The first dopants are of a first conductivity-type. The source/drain feature includes second dopants of a second conductivity-type opposite to the first conductivity-type.
Claims20
A semiconductor structure, comprising:
- a first semiconductor layer having an upper portion over a lower portion, wherein the lower portion is more heavily doped with first dopants than the upper portion, the first dopants being of a first conductivity-type;
- a source/drain feature over the upper portion of the first semiconductor layer, wherein the source/drain feature includes second dopants of a second conductivity-type opposite to the first conductivity-type;
- a second semiconductor layer spaced apart from the upper portion of the first semiconductor layer and abutting the source/drain feature;
- a metal gate structure wrapping around the second semiconductor layer;
- a first contact structure under the lower portion of the first semiconductor layer and electrically connected to the lower portion of the first semiconductor layer;
- and
- a first silicide feature between the lower portion of the first semiconductor layer and the first contact structure.
A semiconductor structure, comprising:
- a well;
- a plurality of semiconductor layers suspended above the well;
- a metal gate structure wrapping around each of the semiconductor layers;
- an epitaxial feature abutting the semiconductor layers;
- a doped layer under the well, wherein the doped layer and the epitaxial feature include net dopants of opposite conductivity-types;
- a first contact structure under the doped layer and electrically connected to the doped layer;
- and
- a second contact structure over the epitaxial feature and electrically connected to the epitaxial feature.
A diode device, comprising:
- a first semiconductor layer having an upper portion over a lower portion, wherein the lower portion is more heavily doped with first dopants than the upper portion, the first dopants being of a first conductivity-type;
- a second semiconductor layer over the upper portion of the first semiconductor layer, wherein the second semiconductor layer includes second dopants of a second conductivity-type opposite to the first conductivity-type;
- a third semiconductor layer abutting the second semiconductor layer;
- a metal-containing feature wrapping around the third semiconductor layer;
- a first contact structure under the lower portion of the first semiconductor layer and electrically connected to the lower portion of the first semiconductor layer;
- and
- a second contact structure over the second semiconductor layer and electrically connected to the second semiconductor layer.
Dependencies are inferred from the claim text.