H10D 84/0158
The components including finfets
Official title: {the components including FinFETs}
H10D84/0158 (The components including finfets) appears on 7,913 US grants and 9,027 published applications in this corpus.
Search patents in H10D- Granted patents
- 7,913
- Published applications
- 9,027
- Assignees
- 457
- Inventors
- 6,570
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 4 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 4 | 0 |
| 1985 | 1 | 0 |
| 1986 | 5 | 0 |
| 1987 | 6 | 0 |
| 1988 | 9 | 0 |
| 1989 | 5 | 0 |
| 1990 | 4 | 0 |
| 1991 | 8 | 0 |
| 1992 | 7 | 0 |
| 1993 | 7 | 0 |
| 1994 | 11 | 0 |
| 1995 | 8 | 0 |
| 1996 | 5 | 0 |
| 1997 | 9 | 0 |
| 1998 | 11 | 0 |
| 1999 | 15 | 0 |
| 2000 | 4 | 0 |
| 2001 | 2 | 0 |
| 2002 | 6 | 12 |
| 2003 | 4 | 35 |
| 2004 | 2 | 6 |
| 2005 | 7 | 9 |
| 2006 | 6 | 15 |
| 2007 | 4 | 27 |
| 2008 | 11 | 37 |
| 2009 | 18 | 37 |
| 2010 | 28 | 32 |
| 2011 | 42 | 65 |
| 2012 | 39 | 76 |
| 2013 | 78 | 169 |
| 2014 | 170 | 269 |
| 2015 | 310 | 463 |
| 2016 | 532 | 592 |
| 2017 | 645 | 684 |
| 2018 | 718 | 716 |
| 2019 | 776 | 796 |
| 2020 | 819 | 990 |
| 2021 | 659 | 768 |
| 2022 | 654 | 890 |
| 2023 | 642 | 775 |
| 2024 | 703 | 776 |
| 2025 | 633 | 559 |
| 2026 | 274 | 229 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Co-integration of S/D metal contact cut and wrap-around-contact6 Oct 2026US 12,757,445 B2International Business Machines Corporation
- Semiconductor device structure including forksheet transistors and methods of forming the same6 Oct 2026US 12,757,710 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and formation method of semiconductor device with power rail29 Sep 2026US 12,751,029 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and forming method thereof29 Sep 2026US 12,751,030 B2Semiconductor Manufacturing International (Beijing) Corporation
- Transistor structure with gate isolation structures and method of fabricating thereof29 Sep 2026US 12,751,057 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure8 Oct 2026US 2026/0313931 A1Taiwan Semiconductor Manufacturing Company.Ltd
- System and methods of manufacturing semiconductor devices8 Oct 2026US 2026/0313933 A1Taiwan Semiconductor Manufacturing Company.Ltd
- FINFET Devices with Backside Power Rail and Backside Self-Aligned Via8 Oct 2026US 2026/0313945 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for forming the same8 Oct 2026US 2026/0314000 A1National Taiwan University
- Semiconductor device with dielectric layer and method of forming the same8 Oct 2026US 2026/0314050 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of cutting metal gate3,322US 9,520,482 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Wrap-around contact550US 9,443,769 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Semiconductor structures and methods with high mobility and high energy bandgap materials544US 8,836,016 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Low capacitance junction-isolation for bulk FinFET technology538US 7,101,763 B1International Business Machines Corporation · 2006