H10D 84/0163
The components including enhancement-mode igfets and depletion-mode igfets
Official title: {the components including enhancement-mode IGFETs and depletion-mode IGFETs}
H10D84/0163 (The components including enhancement-mode igfets and depletion-mode igfets) appears on 140 US grants and 102 published applications in this corpus.
Search patents in H10D- Granted patents
- 140
- Published applications
- 102
- Assignees
- 87
- Inventors
- 297
- Latest grant
- 7 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 5 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 5 | 0 |
| 1992 | 4 | 0 |
| 1993 | 4 | 0 |
| 1994 | 4 | 0 |
| 1995 | 1 | 0 |
| 1996 | 3 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 3 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 1 |
| 2003 | 0 | 0 |
| 2004 | 1 | 0 |
| 2005 | 0 | 2 |
| 2006 | 0 | 2 |
| 2007 | 1 | 2 |
| 2008 | 1 | 2 |
| 2009 | 1 | 2 |
| 2010 | 5 | 0 |
| 2011 | 1 | 1 |
| 2012 | 0 | 1 |
| 2013 | 3 | 5 |
| 2014 | 4 | 7 |
| 2015 | 6 | 7 |
| 2016 | 9 | 9 |
| 2017 | 5 | 4 |
| 2018 | 4 | 7 |
| 2019 | 6 | 9 |
| 2020 | 11 | 12 |
| 2021 | 5 | 4 |
| 2022 | 6 | 5 |
| 2023 | 5 | 3 |
| 2024 | 4 | 10 |
| 2025 | 5 | 5 |
| 2026 | 2 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Reference voltage circuit7 Jul 2026US 12,677,475 B2Nexperia B. V.
- Reference voltage circuit16 Jun 2026US 12,660,305 B2Nexperia B. V.
- Monolithic integration of enhancement-mode and depletion-mode galium nitride high electron mobility transistors28 Oct 2025US 12,457,761 B2National Research Council of Canada
- Monolithic cascode multi-channel high electron mobility transistors7 Oct 2025US 12,439,629 B2Virginia Tech Intellectual Properties, Inc.
- Semiconductor device and manufacturing method thereof12 Aug 2025US 12,389,631 B2Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device and method of manufacturing the same11 Jun 2026US 2026/0164778 A1Renesas Electronics Corporation
- Monolithic integration of hemt devices of normally-off type with hemt devices of normally-on type28 May 2026US 2026/0150384 A1STMicroelectronics International N. V.
- Semiconductor device and manufacturing method thereof6 Nov 2025US 2025/0344441 A1Semiconductor Energy Laboratory Co.Ltd.
- A double-channel semiconductor device23 Oct 2025US 2025/0331297 A1Power Integrations, Inc.
- Semiconductor devices in integrated circuit having different threshold voltages25 Sep 2025US 2025/0301680 A1Texas Instruments Incorporated
Most cited
By later US patents
- Fabricating dual gate thin film transistors225US 5,266,515 AMotorola, Inc. · 1993
- Method of controlling MOSFET threshold voltage with self-aligned channel stop174US 4,315,781 AHughes Aircraft Company · 1982
- Semiconductor device and manufacturing method thereof102US 8,421,068 B2Semiconductor Energy Laboratory Co.Ltd. · 2013
- Method for manufacturing a semiconductor field effort transistor74US 3,967,981 A1976
- Oxide trench structure for polysilicon gates and interconnects58US 4,503,601 ANCR Corporation · 1985