Back to results
US 12,660,305 B2Granted
Reference voltage circuit
AssigneesNexperia B.V., Nexperia Technology (Shanghai) Ltd.
InventorYasuo Matsumura
Life of this patent
Estimating the term…
Abstract
A reference voltage generating circuit is provided, including a first depletion type metal-oxide semiconductor field-effect transistor (MOSFET), a first enhancement type MOSFET, a reference voltage output connected between the first depletion type MOSFET and the first enhancement type MOSFET, and a second depletion type MOSFET.
Claims14
A reference voltage generating circuit comprising:
- a first depletion type metal-oxide semiconductor field-effect transistor (MOSFET) having a source electrode, a drain electrode, and a gate electrode;
- wherein the drain electrode of the first depletion type MOSFET is configured to be connected to a supply potential, and the gate electrode of the first depletion type MOSFET is connected to the source of the first depletion type MOSFET;
- a first enhancement type MOSFET having a source electrode, a drain electrode, and a gate electrode, wherein each of the first depletion type MOSFET and the first enhancement type MOSFET comprises a substrate electrode;
- and
- wherein the drain electrode of the first enhancement type MOSFET is connected to the source electrode of the first depletion type MOSFET, the gate electrode of the first enhancement type MOSFET is connected to the drain of the first enhancement type MOSFET, and the source electrode of the first enhancement type MOSFET is connected to a first reference potential;
- a reference voltage output connected between the source electrode of the first depletion type MOSFET and the drain electrode of the first enhancement type MOSFET;
- a second depletion type MOSFET having a source electrode, a drain electrode, and a gate electrode;
- a first resistor connected between the source of the first depletion type MOSFET and the substrate electrode of the first depletion type MOSFET;
- and
- a second resistor connected between the source of the first enhancement type MOSFET and the substrate electrode of the first enhancement type MOSFET;
- wherein the drain electrode of the second depletion type MOSFET is connected between the supply potential and the drain electrode of the first depletion type MOSFET, and the source electrode of the second depletion type MOSFET is connected between the source electrode of the first depletion type MOSFET and the drain electrode of the first enhancement type MOSFET;
- wherein the first resistor has a resistance, and the second resistor has a resistance that have a ratio that is configured so that a voltage of the reference voltage output decreases with increasing temperature;
- wherein the gate electrode of the second depletion type MOSFET is connected to a second reference potential;
- and
- wherein the first reference potential and the second reference potential are the same.
12 more elements
A method of manufacturing a reference voltage generating circuit, the method comprising the steps of:
- forming a first depletion type metal-oxide semiconductor field-effect transistor (MOSFET) having a source electrode, a drain electrode, and a gate electrode;
- and
- wherein the drain electrode of the first depletion type MOSFET is configured to be connected to a supply potential, and the gate electrode of the first depletion type MOSFET is connected to the source of the first depletion type MOSFET;
- forming a first enhancement type MOSFET having a source electrode, a drain electrode, and a gate electrode, wherein each of the first depletion type MOSFET and the first enhancement type MOSFET comprises a substrate electrode;
- wherein the drain electrode of the first enhancement type MOSFET is connected to the source electrode of the first depletion type MOSFET, the gate electrode of the first enhancement type MOSFET is connected to the drain of the first enhancement type MOSFET, and the source electrode of the first enhancement type MOSFET is connected to a first reference potential;
- forming a reference voltage output connected between the source electrode of the first depletion type MOSFET and the drain electrode of the first enhancement type MOSFET;
- a second depletion type MOSFET having a source electrode, a drain electrode, and a gate electrode;
- forming a first resistor connected between the source of the first depletion type MOSFET and the substrate electrode of the first depletion type MOSFET;
- and
- forming a second resistor connected between the source of the first enhancement type MOSFET and the substrate electrode of the first enhancement type MOSFET;
- wherein the drain electrode of the second depletion type MOSFET is connected between the supply potential and the drain electrode of the first depletion type MOSFET, and the source electrode of the second depletion type MOSFET is connected between the source electrode of the first depletion type MOSFET and the drain electrode of the first enhancement type MOSFET;
- wherein the first resistor has a resistance and the second resistor has a resistance, that has a ratio that is configured so that a voltage of the reference voltage output decreases with increasing temperature;
- wherein the gate electrode of the second depletion type MOSFET is connected to a second reference potential;
- and
- wherein the first reference potential and the second reference potential are the same reference potential.
12 more elements
Dependencies are inferred from the claim text.