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US 2026/0164778 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeRenesas Electronics Corporation
InventorKomaki INOUE
Life of this patent
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Abstract
A semiconductor device includes an n-type offset drain region, an n-type semiconductor region, and a gate electrode. The n-type semiconductor region is arranged apart from the n-type offset drain region.
Claims13
A semiconductor device comprising:
- an epitaxial layer of a first conductivity type;
- a first well formed in the epitaxial layer, the first well being of the first conductivity type;
- a first offset drain region formed in the epitaxial layer and arranged apart from the first well, the first offset drain region being of a second conductivity type;
- a first source region formed in the first well, the first source region being of the second conductivity type;
- a first semiconductor region formed in the first well, in contact with the first source region, arranged apart from the first offset drain region, and having an impurity concentration lower than an impurity concentration of the first source region, the first semiconductor region being of the second conductivity type;
- and
- a first gate electrode formed on each of:
- a portion of the first offset drain region;
- a portion, which is located between the first offset drain region and the first semiconductor region, of the epitaxial layer;
- and the first semiconductor region, via a first gate insulating film,
- wherein, in a gate length direction of the first gate electrode, a length of the portion, which is located between the first offset drain region and the first semiconductor region, of the epitaxial layer is equal to or less than a length of the first semiconductor region.
8 more elements
A method of manufacturing a semiconductor device comprising steps of:
- (a) forming an epitaxial layer of a first conductivity type, the epitaxial layer having a first portion and a second portion;
- (b) by implanting an impurity into the epitaxial layer, forming a first well in the first portion, and forming a second well in the second portion, each of the first well and the second well being of the first conductivity type;
- (c) forming a first offset drain region in the first portion at a position spaced apart from the first well, the first offset drain region being of a second conductivity type;
- (d) forming a second offset drain region in the second portion at a position spaced apart from the second well, the second offset drain region being of the second conductivity type;
- (e) forming a mask covering:
- the first offset drain region;
- a portion, which is in contact with the first offset drain region, of the first portion of the epitaxial layer;
- and a portion of the second offset drain region, while exposing:
- at least a portion of the first well;
- an other portion of the second offset drain region;
- a portion, which is located between the second offset drain region and the second well, of the epitaxial layer;
- and the second well, on the epitaxial layer;
- and
- (f) by introducing an impurity of the second conductivity type into the epitaxial layer in a state in which the mask is formed, forming a first semiconductor region in the first well, and forming a second semiconductor region in each of the second well and the portion, which is located between the second offset drain region and the second well, of the epitaxial layer.
11 more elements
Dependencies are inferred from the claim text.