Semiconductor devices in integrated circuit having different threshold voltages

Abstract

The present disclosure generally relates to semiconductor devices in an integrated circuit (IC) that have different threshold voltages. In an example, a channel layer is formed on a semiconductor substrate. The channel layer includes a gallium nitride (GaN) material. A barrier layer is formed on the channel layer. A first semiconductor device is formed on the semiconductor substrate. The first semiconductor device includes a first terminal over the barrier layer, and the first semiconductor device has a first threshold voltage. A second semiconductor device is formed on the semiconductor substrate. The second semiconductor device includes a second terminal over the barrier layer, and the second semiconductor device has a second threshold voltage different from the first threshold voltage. The first and second threshold voltages are both positive or negative voltages.

Dependencies are inferred from the claim text.