H10D 84/0151
Manufacturing their isolation regions
Official title: {Manufacturing their isolation regions}
H10D84/0151 (Manufacturing their isolation regions) appears on 4,964 US grants and 6,613 published applications in this corpus.
Search patents in H10D- Granted patents
- 4,964
- Published applications
- 6,613
- Assignees
- 410
- Inventors
- 6,511
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 5 | 0 |
| 2000 | 17 | 0 |
| 2001 | 32 | 19 |
| 2002 | 62 | 84 |
| 2003 | 72 | 76 |
| 2004 | 56 | 96 |
| 2005 | 68 | 103 |
| 2006 | 61 | 115 |
| 2007 | 82 | 125 |
| 2008 | 72 | 142 |
| 2009 | 70 | 102 |
| 2010 | 108 | 74 |
| 2011 | 87 | 63 |
| 2012 | 63 | 90 |
| 2013 | 86 | 91 |
| 2014 | 95 | 100 |
| 2015 | 129 | 186 |
| 2016 | 226 | 251 |
| 2017 | 281 | 299 |
| 2018 | 350 | 344 |
| 2019 | 371 | 405 |
| 2020 | 374 | 483 |
| 2021 | 364 | 416 |
| 2022 | 323 | 517 |
| 2023 | 355 | 612 |
| 2024 | 412 | 620 |
| 2025 | 460 | 746 |
| 2026 | 272 | 454 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor structure and method for forming the same6 Oct 2026US 12,757,440 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Wrap around backside source/drain contact6 Oct 2026US 12,757,469 B2International Business Machines Corporation
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,475 B2Taiwan Semiconductor Manfacturing Company, Ltd.
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,481 B2Renesas Electronics Corporation
- Electrostatic discharge (ESD) protection device with a targeted sub-fin etch depth6 Oct 2026US 12,757,497 B2Intel Corporation
- Semiconductor structure8 Oct 2026US 2026/0313931 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Forming isolation regions with low parasitic capacitance and reduced damage8 Oct 2026US 2026/0313971 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and manufacturing method thereof8 Oct 2026US 2026/0313980 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure and methods of forming the same8 Oct 2026US 2026/0314029 A1
- Cpode landing structure on insulator substrate and the methods of forming the same8 Oct 2026US 2026/0314041 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of cutting metal gate3,322US 9,520,482 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Wrap-around contact550US 9,443,769 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Low capacitance junction-isolation for bulk FinFET technology538US 7,101,763 B1International Business Machines Corporation · 2006