H10D 84/0153
Using gate cut processes
Official title: {using gate cut processes}
H10D84/0153 (Using gate cut processes) appears on 499 US grants and 1,001 published applications in this corpus.
Search patents in H10D- Granted patents
- 499
- Published applications
- 1,001
- Assignees
- 32
- Inventors
- 1,166
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2013 | 0 | 2 |
| 2014 | 0 | 1 |
| 2015 | 3 | 1 |
| 2016 | 5 | 5 |
| 2017 | 5 | 10 |
| 2018 | 14 | 11 |
| 2019 | 34 | 48 |
| 2020 | 45 | 66 |
| 2021 | 38 | 54 |
| 2022 | 46 | 108 |
| 2023 | 59 | 145 |
| 2024 | 72 | 171 |
| 2025 | 108 | 222 |
| 2026 | 70 | 157 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,475 B2Taiwan Semiconductor Manfacturing Company, Ltd.
- Semiconductor device and method of manufacturing the same15 Sep 2026US 12,740,131 B2Samsung Electronics Co., Ltd.
- Semiconductor device with source/drain contact MOL cut structure15 Sep 2026US 12,740,132 B2International Business Machines Corporation
- Fabrication of gate-all-around integrated circuit structures having pre-spacer-deposition wide cut gates25 Aug 2026US 12,720,803 B2Intel Corporation
- Partial gate cut structures in an integrated circuit25 Aug 2026US 12,720,820 B2Intel Corporation
- Gate structure and method1 Oct 2026US 2026/0304884 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit structures having trench contact links1 Oct 2026US 2026/0304896 A1Intel Corporation
- Integrated circuit structures having hybrid spine-fet architecture1 Oct 2026US 2026/0304934 A1Intel Corporation
- Semiconductor device and method1 Oct 2026US 2026/0305219 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device24 Sep 2026US 2026/0293275 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of cutting metal gate3,322US 9,520,482 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method of forming field effect transistors with replacement metal gates and contacts and resulting structure57US 9,911,736 B1Globalfoundries Inc. · 2018
- Semiconductor device and manufacturing method thereof47US 9,899,267 B1United Microelectronics Corp. · 2018
- Method for forming single diffusion breaks between finFET devices and the resulting devices37US 9,406,676 B2Globalfoundries Inc. · 2016
- Method and device for incorporating single diffusion break into nanochannel structures of FET devices28US 10,388,519 B2Tokyo Electron Limited · 2019