Integrated circuit structures having trench contact links

An integrated circuit structure, comprising:

• a fin;
• an epitaxial source or drain structure at an end of the fin;
• a gate electrode over the fin;
• a conductive trench contact over the epitaxial source or drain structure;
• a dielectric cut plug laterally adjacent to the conductive trench contact;
• a conductive via bar within the dielectric cut plug;
• and
• a conductive link coupling the conductive trench contact and the conductive via bar.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a vertical stack of horizontal nanowires or a fin;
• an epitaxial source or drain structure at an end of the vertical stack of horizontal nanowires or the fin;
• a gate electrode over the vertical stack of horizontal nanowires or the fin;
• a conductive trench contact over the epitaxial source or drain structure;
• a dielectric cut plug laterally adjacent to the conductive trench contact;
• a conductive via bar within the dielectric cut plug;
• and
• a conductive link coupling the conductive trench contact and the conductive via bar.