H10P 30/20
Into semiconductor materials
Official title: into semiconductor materials, e.g. for doping
H10P30/20 (Into semiconductor materials) appears on 12,289 US grants and 12,443 published applications in this corpus.
Search patents in H10P- Granted patents
- 12,289
- Published applications
- 12,443
- Assignees
- 1,416
- Inventors
- 14,502
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 15 | 0 |
| 1977 | 42 | 0 |
| 1978 | 41 | 0 |
| 1979 | 39 | 0 |
| 1980 | 28 | 0 |
| 1981 | 32 | 0 |
| 1982 | 22 | 0 |
| 1983 | 41 | 0 |
| 1984 | 49 | 0 |
| 1985 | 40 | 0 |
| 1986 | 33 | 0 |
| 1987 | 46 | 0 |
| 1988 | 35 | 0 |
| 1989 | 34 | 0 |
| 1990 | 27 | 0 |
| 1991 | 47 | 0 |
| 1992 | 48 | 0 |
| 1993 | 64 | 0 |
| 1994 | 63 | 0 |
| 1995 | 62 | 0 |
| 1996 | 56 | 0 |
| 1997 | 58 | 0 |
| 1998 | 100 | 0 |
| 1999 | 184 | 0 |
| 2000 | 246 | 0 |
| 2001 | 249 | 80 |
| 2002 | 262 | 199 |
| 2003 | 233 | 205 |
| 2004 | 244 | 324 |
| 2005 | 177 | 367 |
| 2006 | 271 | 409 |
| 2007 | 250 | 404 |
| 2008 | 220 | 485 |
| 2009 | 283 | 419 |
| 2010 | 393 | 404 |
| 2011 | 358 | 461 |
| 2012 | 332 | 458 |
| 2013 | 446 | 546 |
| 2014 | 561 | 623 |
| 2015 | 662 | 907 |
| 2016 | 836 | 877 |
| 2017 | 850 | 832 |
| 2018 | 721 | 729 |
| 2019 | 746 | 692 |
| 2020 | 639 | 578 |
| 2021 | 492 | 485 |
| 2022 | 384 | 510 |
| 2023 | 359 | 447 |
| 2024 | 333 | 420 |
| 2025 | 322 | 369 |
| 2026 | 214 | 213 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10P 30/202Characterised by the semiconductor materials7,741
- H10P 30/21Of electrically active species5,657
- H10P 30/22Using masks3,847
- H10P 30/208Of electrically inactive species3,281
- H10P 30/222Characterised by the angle between the ion beam and the crystal planes3,043
- H10P 30/28Characterised by an annealing step2,130
- H10P 30/225Of a molecular ion945
- H10P 30/224Of a cluster204
Recent patents
- Method of fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region6 Oct 2026US 12,757,420 B2Texas Instruments Incorporated
- Method for manufacturing semiconductor structure with source/drain structure having modified shape6 Oct 2026US 12,757,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device6 Oct 2026US 12,757,446 B2Idemitsu Kosan Co., Ltd.
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Semiconductor device6 Oct 2026US 12,757,479 B2Fuji Electric Co., Ltd.
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0313926 A1Texas Instruments Incorporated
- Defect free low temperature junction formation for 4f2 dram8 Oct 2026US 2026/0313935 A1APPLIED Materials.Inc.
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0314281 A1Texas Instruments Incorporated
- Deep trench isolation for semiconductor devices with enhanced breakdown protection8 Oct 2026US 2026/0314421 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for fabricating power semiconductor device and power semiconductor device1 Oct 2026US 2026/0304812 A1Xiinergy Systems, Inc
Most cited
By later US patents
- Field-effect transistor and method for manufacturing the same3,966US 7,411,209 B2Canon Kabushiki Kaisha · 2008
- Process for the production of thin semiconductor material films1,233US 5,374,564 ACommissariat A L' Energie Atomique · 1994
- Silicon carbide semiconductor device and method for producing the same641US 7,829,416 B2Panasonic Corporation · 2010
- Fin field-effect transistors568US 7,667,271 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2010
- Low temperature CVD process with selected stress of the CVD layer on CMOS devices559US 7,393,765 B2APPLIED Materials.Inc. · 2008