Back to results
US 7,411,209 B2Granted
Field-effect transistor and method for manufacturing the same
AssigneeCanon Kabushiki Kaisha
InventorsAyanori Endo, Ryo Hayashi, Tatsuya Iwasaki
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.
Claims14
A method for manufacturing a field-effect transistor, comprising the steps of:
- forming a source electrode and a drain electrode each containing hydrogen or deuterium;
- forming an oxide semiconductor layer, the electrical resistance of the oxide semiconductor layer being decreased if hydrogen or deuterium is added;
- and
- causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.
1 more element
A field-effect transistor comprising:
- an oxide semiconductor layer, the electrical resistance of the oxide semiconductor layer being decreased if hydrogen or deuterium is added,
- wherein the concentration of hydrogen or deuterium in regions in the oxide semiconductor layer in contact with a source electrode and a drain electrode is higher than the average concentration of hydrogen or deuterium in the oxide semiconductor layer.
Dependencies are inferred from the claim text.