H10P 30/21
Of electrically active species
Official title: {of electrically active species}
H10P30/21 (Of electrically active species) appears on 5,657 US grants and 5,922 published applications in this corpus.
Search patents in H10P- Granted patents
- 5,657
- Published applications
- 5,922
- Assignees
- 905
- Inventors
- 8,127
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 29 | 0 |
| 1978 | 28 | 0 |
| 1979 | 27 | 0 |
| 1980 | 17 | 0 |
| 1981 | 19 | 0 |
| 1982 | 12 | 0 |
| 1983 | 23 | 0 |
| 1984 | 23 | 0 |
| 1985 | 23 | 0 |
| 1986 | 17 | 0 |
| 1987 | 20 | 0 |
| 1988 | 16 | 0 |
| 1989 | 13 | 0 |
| 1990 | 8 | 0 |
| 1991 | 12 | 0 |
| 1992 | 15 | 0 |
| 1993 | 19 | 0 |
| 1994 | 17 | 0 |
| 1995 | 22 | 0 |
| 1996 | 7 | 0 |
| 1997 | 18 | 0 |
| 1998 | 30 | 0 |
| 1999 | 69 | 0 |
| 2000 | 88 | 0 |
| 2001 | 86 | 28 |
| 2002 | 107 | 74 |
| 2003 | 83 | 76 |
| 2004 | 93 | 138 |
| 2005 | 72 | 148 |
| 2006 | 108 | 151 |
| 2007 | 96 | 166 |
| 2008 | 83 | 243 |
| 2009 | 118 | 185 |
| 2010 | 182 | 174 |
| 2011 | 144 | 174 |
| 2012 | 134 | 171 |
| 2013 | 171 | 189 |
| 2014 | 176 | 231 |
| 2015 | 261 | 425 |
| 2016 | 412 | 470 |
| 2017 | 433 | 424 |
| 2018 | 372 | 381 |
| 2019 | 381 | 387 |
| 2020 | 342 | 336 |
| 2021 | 293 | 280 |
| 2022 | 228 | 285 |
| 2023 | 207 | 259 |
| 2024 | 183 | 250 |
| 2025 | 192 | 197 |
| 2026 | 123 | 80 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region6 Oct 2026US 12,757,420 B2Texas Instruments Incorporated
- Method for manufacturing semiconductor structure with source/drain structure having modified shape6 Oct 2026US 12,757,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Semiconductor device6 Oct 2026US 12,757,479 B2Fuji Electric Co., Ltd.
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,481 B2Renesas Electronics Corporation
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0313926 A1Texas Instruments Incorporated
- Method for fabricating power semiconductor device and power semiconductor device1 Oct 2026US 2026/0304812 A1Xiinergy Systems, Inc
- Gan trench mosfet and fabrication method1 Oct 2026US 2026/0304832 A1SixPoint Materials, Inc.
- Sic trench mosfet with trench bottom protection structure and method for manufacturing the same1 Oct 2026US 2026/0304854 A1Power Master Semiconductor Co., Ltd.
- Field effect transistor1 Oct 2026US 2026/0304861 A1Denso Corporation
Most cited
By later US patents
- Silicon carbide semiconductor device and method for producing the same641US 7,829,416 B2Panasonic Corporation · 2010
- Low temperature CVD process with selected stress of the CVD layer on CMOS devices559US 7,393,765 B2APPLIED Materials.Inc. · 2008
- Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing543US 7,109,098 B1APPLIED Materials.Inc. · 2006
- Field plate in heterojunction bipolar transistor with improved break-down voltage512US 9,324,846 B1Globalfoundries Inc. · 2016
- Multiple gate field-effect transistors having oxygen-scavenged gate stack305US 9,564,489 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017