Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsKazuki Kamimura, Toshiyuki Matsui, Tatsuya Naito
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Abstract
There is provided a semiconductor device that includes a diode portion, the semiconductor device including: a drift region of a first conductivity type provided in a semiconductor substrate; an anode region of a second conductivity type provided to be closer to a front surface side of the semiconductor substrate than the drift region; and a trench contact portion provided at a front surface of the semiconductor substrate in the diode portion, in which in a depth direction of the semiconductor substrate, a doping concentration of the anode region at a same depth as that of a bottom portion of the trench contact portion is 1E16 cm−3 or more and 1E17 cm−3 or less.
Claims15
A semiconductor device that includes a diode portion, the semiconductor device comprising:
- a drift region of a first conductivity type provided in a semiconductor substrate;
- an anode region of a second conductivity type provided to be closer to a front surface side of the semiconductor substrate than the drift region;
- and
- a trench contact portion provided at the front surface of the semiconductor substrate in the diode portion, wherein
- in a depth direction of the semiconductor substrate, a doping concentration of the anode region at a same depth as that of a bottom portion of the trench contact portion is 1E16 cm−3 or more and 1E17 cm−3 or less,
- a depth of a lower end of the trench contact portion is 0.3 μm or more and 0.6 μm or less from the front surface of the semiconductor substrate.
Dependencies are inferred from the claim text.