H10P 30/212
Through-implantation
Official title: {Through-implantation}
H10P30/212 (Through-implantation) appears on 1,037 US grants and 828 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,037
- Published applications
- 828
- Assignees
- 299
- Inventors
- 2,016
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 17 | 0 |
| 1978 | 13 | 0 |
| 1979 | 9 | 0 |
| 1980 | 6 | 0 |
| 1981 | 9 | 0 |
| 1982 | 8 | 0 |
| 1983 | 14 | 0 |
| 1984 | 12 | 0 |
| 1985 | 12 | 0 |
| 1986 | 12 | 0 |
| 1987 | 7 | 0 |
| 1988 | 7 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 4 | 0 |
| 1992 | 7 | 0 |
| 1993 | 8 | 0 |
| 1994 | 6 | 0 |
| 1995 | 12 | 0 |
| 1996 | 4 | 0 |
| 1997 | 5 | 0 |
| 1998 | 14 | 0 |
| 1999 | 34 | 0 |
| 2000 | 43 | 0 |
| 2001 | 34 | 10 |
| 2002 | 40 | 33 |
| 2003 | 33 | 35 |
| 2004 | 36 | 51 |
| 2005 | 25 | 49 |
| 2006 | 38 | 23 |
| 2007 | 35 | 34 |
| 2008 | 16 | 43 |
| 2009 | 34 | 26 |
| 2010 | 21 | 28 |
| 2011 | 21 | 29 |
| 2012 | 26 | 33 |
| 2013 | 32 | 32 |
| 2014 | 23 | 31 |
| 2015 | 34 | 54 |
| 2016 | 51 | 58 |
| 2017 | 51 | 38 |
| 2018 | 34 | 37 |
| 2019 | 37 | 32 |
| 2020 | 33 | 23 |
| 2021 | 17 | 21 |
| 2022 | 25 | 38 |
| 2023 | 16 | 18 |
| 2024 | 24 | 22 |
| 2025 | 19 | 23 |
| 2026 | 10 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- High voltage semiconductor device and method of manufacturing same29 Sep 2026US 12,751,041 B2DB HiTek Co., Ltd.
- Method and structure for diodes with backside contacts8 Sep 2026US 12,733,188 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for manufacturing the same1 Sep 2026US 12,727,218 B2Enkris Semiconductor, Inc.
- Ion beam implantation method and semiconductor device25 Aug 2026US 12,721,070 B2Infineon Technologies AG
- Control and localization of porosity in III-nitrides and methods of using and making thereof11 Aug 2026US 12,707,907 B2Yale University
- Sic trench mosfet with trench bottom protection structure and method for manufacturing the same1 Oct 2026US 2026/0304854 A1Power Master Semiconductor Co., Ltd.
- Radiation hardened field effect transistor with doped buffer layer17 Sep 2026US 2026/0282433 A1Microchip Technology Incorporated
- Semiconductor device including nanosheet structure and method for manufacturing the same20 Aug 2026US 2026/0247697 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Back-side implantation and nanosecond laser annealing for source/drain regions16 Jul 2026US 2026/0206554 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor, method for manufacturing same, and ternary inverter comprising same23 Apr 2026US 2026/0113992 A1Unist (Ulsan National Institute of Science and Technology)
Most cited
By later US patents
- Formation of integrated circuit structure using one or more silicon layers for implantation and out-diffusion in formation of defect-free source/drain regions and also for subsequent formation of silicon nitride spacers273US 6,331,468 B1LSI Logic Corporation · 2001
- Method for fabricating a MOSFET device271US 6,534,352 B1Hynix Semiconductor Inc. · 2003
- Method of controlling MOSFET threshold voltage with self-aligned channel stop174US 4,315,781 AHughes Aircraft Company · 1982
- Process of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealing169US 4,617,066 AHughes Aircraft Company · 1986
- Semiconductor device and a method for fabricating the same142US 4,021,835 AHitachi, Ltd. · 1977