Ion beam implantation method and semiconductor device

A method of manufacturing a semiconductor device comprising:

• orienting a substrate of the semiconductor device to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval;
• and
• implanting, using an ion beam propagating along an ion beam axis, dopant ions into the substrate to form a doped region in the substrate, wherein:
• the dopant ions are implanted at implant angles between the ion beam axis and the target axis;
• the implant angles are within an implant angle range;
• the doped region comprises a first local dopant concentration maximum at a first distance to a first surface of the substrate, a second local dopant concentration maximum at a second distance to the first surface, and a local dopant concentration minimum at a third distance to the first surface;
• the third distance is between the first distance and the second distance;
• the first distance is greater than the second distance;
• and
• at least one of:
• a difference between the first distance and the second distance is in a range from 200 nanometers (nm) to 1500 nm;
• a ratio between the first local dopant concentration maximum and the second local dopant concentration maximum is in a range from 0.5 to 2;
• or
• a ratio between a sum of the first local dopant concentration maximum and the second local dopant concentration maximum and the local dopant concentration minimum is in a range from 2 to 10.

A semiconductor device, comprising:

• a semiconductor body comprising a first surface and a doped region, wherein:
• the semiconductor body comprises silicon carbide;
• the doped region comprises a first local dopant concentration maximum at a first distance to the first surface, a second local dopant concentration maximum at a second distance to the first surface, and a local dopant concentration minimum at a third distance to the first surface;
• the third distance is between the first distance and the second distance;
• and
• starting at the first distance to the first surface, a dopant concentration in the doped region decreases with increasing distance to the first surface by 90% of the first local dopant concentration maximum within at most 2 micrometers (μm).