H10P 30/00
Ion implantation into wafers, substrates or parts of devices
H10P30/00 (Ion implantation into wafers, substrates or parts of devices) appears on 12,933 US grants and 13,163 published applications in this corpus.
Search patents in H10P- Granted patents
- 12,933
- Published applications
- 13,163
- Assignees
- 1,441
- Inventors
- 15,287
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 17 | 0 |
| 1977 | 45 | 0 |
| 1978 | 43 | 0 |
| 1979 | 40 | 0 |
| 1980 | 30 | 0 |
| 1981 | 35 | 0 |
| 1982 | 22 | 0 |
| 1983 | 45 | 0 |
| 1984 | 53 | 0 |
| 1985 | 44 | 0 |
| 1986 | 34 | 0 |
| 1987 | 48 | 0 |
| 1988 | 37 | 0 |
| 1989 | 38 | 0 |
| 1990 | 29 | 0 |
| 1991 | 48 | 0 |
| 1992 | 49 | 0 |
| 1993 | 66 | 0 |
| 1994 | 64 | 0 |
| 1995 | 62 | 0 |
| 1996 | 56 | 0 |
| 1997 | 58 | 0 |
| 1998 | 100 | 0 |
| 1999 | 186 | 0 |
| 2000 | 254 | 0 |
| 2001 | 271 | 86 |
| 2002 | 269 | 208 |
| 2003 | 244 | 214 |
| 2004 | 255 | 332 |
| 2005 | 185 | 381 |
| 2006 | 276 | 422 |
| 2007 | 255 | 417 |
| 2008 | 226 | 510 |
| 2009 | 293 | 432 |
| 2010 | 410 | 418 |
| 2011 | 367 | 472 |
| 2012 | 345 | 477 |
| 2013 | 456 | 555 |
| 2014 | 570 | 643 |
| 2015 | 686 | 935 |
| 2016 | 857 | 907 |
| 2017 | 895 | 877 |
| 2018 | 774 | 779 |
| 2019 | 789 | 751 |
| 2020 | 693 | 636 |
| 2021 | 525 | 521 |
| 2022 | 428 | 561 |
| 2023 | 382 | 498 |
| 2024 | 372 | 478 |
| 2025 | 372 | 426 |
| 2026 | 235 | 227 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region6 Oct 2026US 12,757,420 B2Texas Instruments Incorporated
- Method for manufacturing semiconductor structure with source/drain structure having modified shape6 Oct 2026US 12,757,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device6 Oct 2026US 12,757,446 B2Idemitsu Kosan Co., Ltd.
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Semiconductor device6 Oct 2026US 12,757,479 B2Fuji Electric Co., Ltd.
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0313926 A1Texas Instruments Incorporated
- Defect free low temperature junction formation for 4f2 dram8 Oct 2026US 2026/0313935 A1APPLIED Materials.Inc.
- Stacked multi-gate device with diffusion stopping layer8 Oct 2026US 2026/0314063 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0314281 A1Texas Instruments Incorporated
- Semiconductor device and method for manufacturing the same8 Oct 2026US 2026/0314282 A1MagnaChip Semiconductor, Ltd.
Most cited
By later US patents
- Field-effect transistor and method for manufacturing the same3,966US 7,411,209 B2Canon Kabushiki Kaisha · 2008
- Process for the production of thin semiconductor material films1,233US 5,374,564 ACommissariat A L' Energie Atomique · 1994
- Vertical gate all around (VGAA) transistors and methods of forming the same1,029US 9,502,265 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Silicon carbide semiconductor device and method for producing the same641US 7,829,416 B2Panasonic Corporation · 2010
- Fin field-effect transistors568US 7,667,271 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2010