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US 2026/0314282 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeMagnaChip Semiconductor, Ltd.
InventorJun Hyun KIM
Life of this patent
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Abstract
A method for manufacturing a semiconductor device includes forming a trench in a semiconductor substrate; forming an oxide film layer in the trench; selectively implanting an inert gas into an upper corner region of the oxide film layer through tilt ion implantation; and depositing a polysilicon layer on the oxide film layer to gap-fill the trench.
Claims20
A method for manufacturing a semiconductor device, comprising:
- forming a trench in a semiconductor substrate;
- forming an oxide film layer in the trench;
- selectively implanting an inert gas into an upper corner region of the oxide film layer through tilt ion implantation;
- and
- depositing a polysilicon layer on the oxide film layer to gap-fill the trench.
2 more elements
A method for manufacturing a semiconductor device, comprising:
- forming a trench in a semiconductor substrate;
- forming an oxide film layer in the trench;
- tilting a platen positioned under the semiconductor substrate and selectively implanting an inert gas into an upper corner region of the oxide film layer using an ion implanter;
- and
- depositing a polysilicon layer on the oxide film layer to gap-fill the trench.
2 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a trench disposed in the semiconductor substrate;
- an oxide film layer disposed along an upper surface of the semiconductor substrate and an inner wall of the trench;
- and
- a polysilicon layer disposed to gap-fill the trench,
- wherein an angle of an upper corner region of the oxide film layer is 85° or less.
3 more elements
Dependencies are inferred from the claim text.