H10P 30/40
Into insulating materials
Official title: into insulating materials
H10P30/40 (Into insulating materials) appears on 925 US grants and 1,027 published applications in this corpus.
Search patents in H10P- Granted patents
- 925
- Published applications
- 1,027
- Assignees
- 199
- Inventors
- 1,951
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 3 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 4 | 0 |
| 1982 | 0 | 0 |
| 1983 | 4 | 0 |
| 1984 | 6 | 0 |
| 1985 | 4 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 4 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 3 | 0 |
| 2000 | 9 | 0 |
| 2001 | 23 | 7 |
| 2002 | 11 | 15 |
| 2003 | 17 | 11 |
| 2004 | 14 | 9 |
| 2005 | 8 | 18 |
| 2006 | 8 | 14 |
| 2007 | 7 | 16 |
| 2008 | 7 | 28 |
| 2009 | 12 | 18 |
| 2010 | 19 | 17 |
| 2011 | 13 | 14 |
| 2012 | 16 | 24 |
| 2013 | 15 | 13 |
| 2014 | 17 | 30 |
| 2015 | 36 | 52 |
| 2016 | 42 | 72 |
| 2017 | 84 | 78 |
| 2018 | 78 | 71 |
| 2019 | 69 | 84 |
| 2020 | 74 | 82 |
| 2021 | 54 | 60 |
| 2022 | 68 | 72 |
| 2023 | 36 | 60 |
| 2024 | 58 | 76 |
| 2025 | 58 | 64 |
| 2026 | 24 | 22 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Cylindric decomposition for efficient mitigation of substrate deformation with film deposition and ion implantation29 Sep 2026US 12,751,253 B2APPLIED Materials.Inc.
- Ion implantation for increased adhesion with resist material22 Sep 2026US 12,745,578 B2APPLIED Materials.Inc.
- Stacked multi-gate device with diffusion stopping layer and manufacturing method thereof1 Sep 2026US 12,727,241 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing the same1 Sep 2026US 12,727,452 B2Nanya Technology Corporation
- Warpage modulation through implantation and the structures thereof1 Sep 2026US 12,727,482 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Stacked multi-gate device with diffusion stopping layer8 Oct 2026US 2026/0314063 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for manufacturing the same8 Oct 2026US 2026/0314282 A1MagnaChip Semiconductor, Ltd.
- Multi-function etching sacrificial layers to protect three-dimensional dummy fins in semiconductor devices8 Oct 2026US 2026/0314347 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of fabricating semiconductor device10 Sep 2026US 2026/0271361 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Localized film stress modulation by implant20 Aug 2026US 2026/0247885 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Vertical gate all around (VGAA) transistors and methods of forming the same1,029US 9,502,265 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method for manufacturing semiconductor device391US 8,324,699 B2Semiconductor Energy Laboratory Co.Ltd. · 2012
- Low-K gate spacers by fluorine implantation252US 6,720,213 B1International Business Machines Corporation · 2004
- Use of amorphous carbon for gate patterning149US 7,015,124 B1Advanced Micro Devices, Inc. · 2006
- Self-aligned process147US 9,343,272 B1APPLIED Materials.Inc. · 2016