Back to results
US 12,727,482 B2Granted
Warpage modulation through implantation and the structures thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYang-Chih Hsueh, Yan-Zuo Tsai, Ming-Tsu Chung, Yung-Chi Lin
Life of this patent
Estimating the term…
Abstract
A method includes depositing a dielectric layer on a package component having a first warpage, and performing an implantation process to implant the dielectric layer with a stress modulation dopant. After the implantation process, the package component has a second warpage smaller than the first warpage.
Claims20
A method comprising:
- depositing a dielectric layer on a package component having a first warpage;
- and
- performing an implantation process to implant the dielectric layer with a stress modulation dopant, wherein after the implantation process, the package component has a second warpage smaller than the first warpage.
A method comprising:
- forming a first dielectric layer;
- forming a second dielectric layer over and contacting the first dielectric layer;
- performing a doping process on the second dielectric layer, so that the second dielectric layer comprises:
- a first portion comprising a stress modulation dopant therein, wherein the first portion of the stress modulation dopant is doped through the doping process to have a first peak concentration;
- and
- a second portion, wherein the second portion of the stress modulation dopant has a second peak concentration in the second dielectric layer, and the second peak concentration is lower than the first peak concentration;
- and
- a third dielectric layer over the second dielectric layer.
5 more elements
A method comprising:
- forming active devices in a substrate;
- forming an interconnect structure over the active devices, wherein the interconnect structure are formed using processes comprising:
- forming a passivation layer comprising first portions and second portions, wherein the first portions are implanted with a stress modulation dopant, and the second portions have at least lower concentrations of the stress modulation dopant than the first portions;
- and
- forming a plurality of conductive features in the passivation layer, wherein each of the plurality of conductive features is encircled by one of the second portions of the passivation layer, and is spaced apart from the first portions;
- and
- forming a bond layer over the passivation layer.
4 more elements
Dependencies are inferred from the claim text.