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US 7,015,124 B1Granted
Use of amorphous carbon for gate patterning
AssigneeAdvanced Micro Devices, Inc.
InventorsPhilip A. Fisher, Richard J. Huang, Cyrus E. Tabery
Life of this patent
Estimating the term…
Abstract
A method of producing an integrated circuit includes providing a mask definition structure above a layer of conductive material and providing a mask above the layer of conductive material and in contact with at least a portion of the mask definition structure. The mask definition structure comprises a first material and the mask comprises a second material, wherein at least one of the first and second materials comprises amorphous carbon. The mask definition structure is removed, and the layer of conductive material is patterned according to the mask.
Claims26
A method of producing an integrated circuit comprising:
- providing a mask definition structure above a layer of conductive material, the mask definition structure comprising a first material;
- providing a mask above the layer of conductive material and in contact with at least a portion of the mask definition structure, the mask comprising a second material;
- removing the mask definition structure;
- and
- patterning the layer of conductive material according to the mask;
- wherein at least one of the first and second materials comprises amorphous carbon doped with a third material selected from the group consisting of nitrogen, helium, argon, krypton, radon, neon, and xenon.
3 more elements
A method of producing an integrated circuit comprising:
- providing a mask definition structure above a layer of conductive material, the mask definition structure comprising a first material;
- providing a mask above the layer of conductive material and in contact with at least a portion of the mask definition structure, the mask comprising a second material;
- removing the mask definition structure;
- and
- patterning the layer of conductive material according to the mask;
- wherein at least one of the first and second materials comprises amorphous carbon;
- and
- wherein at least one of the first and second materials comprises amorphous carbon doped with at least one of nitrogen, helium, argon, krypton, radon, neon, and xenon.
5 more elements
A method of forming features in an integrated circuit comprising:
- forming a mask support structure above a layer of polysilicon;
- depositing mask material adjacent to the mask support structure;
- removing a portion of the mask material to form a mask, the mask abutting a portion of the mask support structure;
- removing the mask support structure;
- and
- etching the layer of polysilicon according to the mask;
- wherein one of the mask support structure and the mask comprises amorphous carbon;
- and
- implanting the amorphous carbon with at least one material selected from the group consisting of nitrogen, helium, argon, krypton, radon, neon, and xenon.
6 more elements
A method of forming features in an integrated circuit comprising:
- forming a mask support structure above a layer of polysilicon;
- depositing mask material adjacent to the mask support structure;
- removing a portion of the mask material to form a mask, the mask abutting a portion of the mask support structure;
- removing the mask support structure;
- and
- etching the layer of polysilicon according to the mask;
- wherein the mask comprises amorphous carbon;
- and
- wherein the mask material further comprises at least one of nitrogen, helium, argon, krypton, radon, neon, and xenon.
6 more elements
A method of forming features in an integrated circuit comprising:
- forming a mask support structure above a layer of polysilicon;
- depositing mask material adjacent to the mask support structure;
- removing a portion of the mask material to form a mask, the mask abutting a portion of the mask support structure;
- removing the mask support structure;
- and
- etching the layer of polysilicon according to the mask;
- wherein the mask support structure comprises amorphous carbon and the step of forming the mask support structure comprises depositing a layer of anti-reflective coating (ARC) material over an amorphous carbon layer and patterning the layer of ARC material.
4 more elements
An integrated circuit produced by a method comprising:
- providing a first layer of material over a layer of conductive material;
- removing a portion of the first layer of material to form a mask definition feature;
- providing a second layer of material over the layer of conductive material and adjacent to at least a portion of the mask definition feature;
- removing a portion of the second layer of material to form a mask, wherein at least a portion of the mask is defined by the mask definition feature;
- removing the mask definition feature;
- and
- forming a feature in the layer of conductive material according to the mask;
- wherein one of the first layer of material arid the second layer of material comprises amorphous carbon doped with a material configured to reduce stresses in the amorphous carbon, wherein the material configured to reduce stresses in the amorphous carbon comprises at least one material selected from the group consisting of nitrogen, helium, argon, krypton, radon, neon, and xenon.
5 more elements
A method of producing an integrated circuit comprising:
- providing a mask definition structure above a layer of conductive material, the mask definition structure a first material;
- providing a mask above the layer of conductive material and in contact with at least a portion of the mask definition structure, the mask comprising a second material;
- removing the mask definition structure;
- and
- patterning the layer of conductive material according to the mask;
- wherein at least one of the first and second materials comprises amorphous carbon doped with a third material;
- wherein the first material is doped with the third material, the third material comprising nitrogen.
4 more elements
A method of producing an integrated circuit comprising:
- providing a mask definition structure above a layer of conductive material, the mask definition structure comprising a first material;
- providing a mask above the layer of conductive material and in contact with at least a portion of the mask definition structure, the mask comprising a second material;
- removing the mask definition structure;
- and
- patterning the layer of conductive material according to the mask;
- wherein at least one of the first and second materials comprises amorphous carbon doped with a third material;
- wherein the second material is doped with the third material, the third material comprising nitrogen.
4 more elements
A method of producing an integrated circuit comprising:
- providing a mask definition structure above a layer of conductive material, the mask definition structure comprising a first material;
- providing a mask above the layer of conductive material and in contact with at least a portion of the mask definition structure, the mask comprising a second material;
- removing the mask definition structure;
- and
- patterning the layer of conductive material according to the mask;
- wherein at least one of the first and second materials comprises amorphous carbon doped with a third material;
- wherein the first material is doped with the third material, the third material comprises a material selected from the group consisting of helium, argon, krypton, radon, neon, and xenon.
4 more elements
A method of producing an integrated circuit comprising;
- providing a mask definition structure above a layer of conductive material, the mask definition structure comprising a first material;
- providing a mask above the layer of conductive material and in contact with at least a portion of the mask definition structure, the mask comprising a second material;
- removing the mask definition structure;
- and
- patterning the layer of conductive material according to the mask;
- wherein at least one of the first and second materials comprises amorphous carbon doped with a third material;
- wherein the second material is doped with the third material, the third material comprising a material selected from the group consisting of helium, argon, krypton, radon, neon, and xenon.
4 more elements
An integrated circuit produced by a method comprising:
- providing a first layer of material over a layer of conductive material;
- removing a portion of the first layer of material to form a mask definition feature;
- providing a second layer of material over the layer of conductive material and adjacent to at least a portion of the mask definition feature;
- removing a portion of the second layer of material to form a mask wherein at least a portion of the mask is defined by the mask definition feature;
- removing the mask definition feature;
- and
- forming a feature in the layer of conductive material according to the mask;
- wherein one of the first layer of material and the second layer of material comprises amorphous carbon doped with a material configured to reduce stresses in the amorphous carbon;
- wherein the material configured to reduce stresses in the amorphous carbon comprises nitrogen.
6 more elements
An integrated circuit produced by a method comprising;
- providing a first layer of material over a layer of conductive material;
- removing a portion of the first layer of material to form a mask definition feature;
- providing a second layer of material over the layer of conductive material and adjacent to at least a portion of the mask definition feature;
- removing a portion of the second layer of material to form a mask, wherein at least a portion of the mask is defined by the mask definition feature;
- removing the mask definition feature;
- and
- forming a feature in the layer of conductive material according to the mask;
- wherein one of the first layer of material and the second layer of material comprises amorphous carbon doped with a material configured to reduce stresses in the amorphous carbon;
- wherein the material configured to reduce stresses in the amorphous carbon comprises a material selected from the group consisting of helium, argon, krypton, radon, neon, and xenon.
6 more elements
Dependencies are inferred from the claim text.