Low-K gate spacers by fluorine implantation
AssigneeInternational Business Machines Corporation
InventorsJeffrey P. Gambino, Jack Mandelman, William R. Tonti
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Abstract
A MOSFET device and a method of fabricating a MOSFET device having low-K dielectric oxide gate sidewall spacers produced by fluorine implantation. The present invention implants fluorine into the gate oxide sidewall spacers which is used to alter the properties of advanced composite gate dielectrics e.g. nitridized oxides, NO, and gate sidewall dielectrics, such that the low-K properties of fluorine are used to develop low parasitic capacitance MOSFETs.
Claims15
A method of fabricating a MOSFET device having low-K dielectric oxide gate sidewall spacers formed by fluorine implantation, such that the implanted fluorine alters the properties of the gate sidewall spacers to develop a low parasitic capacitance MOSFET, comprising:
- fabricating a MOSFET device structure;
- forming a silicon nitride etch stop layer over the fabricated MOSFET device structure of the previous step;
- depositing an oxide layer over the silicon nitride etch stop layer on the surfaces of the fabricated structure of the previous step to protect the substrate from a subsequent fluorine implant;
- performing a fluorine implant through the silicon nitride etch stop layer and into the oxide gate sidewall spacers to form low-K fluorine doped oxide gate sidewall spacers.
Dependencies are inferred from the claim text.