Semiconductor device and method of manufacturing the same
AssigneeNanya Technology Corporation
InventorJen-I Lai
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Abstract
The present disclosure provides a method of manufacturing a semiconductor device. The method includes: providing a semiconductor structure, in which the semiconductor structure comprises a silicon substrate having a plurality of trenches and an oxide material filled in the trenches and covering the silicon substrate, and the trenches define a plurality of island structures; forming a pad oxide layer on a top portion of the oxide material, in which the pad oxide layer is located over the silicon substrate; and removing the pad oxide layer, so that a top surface of the oxide material and a top surface of the island structures are coplanar.
Claims15
A method of manufacturing a semiconductor device, comprising:
- providing a semiconductor structure, wherein the semiconductor structure comprises a silicon substrate having a plurality of trenches and an oxide material filled in the trenches and covering the silicon substrate, and the trenches define a plurality of island structures;
- forming a pad oxide layer on a top portion of the oxide material, wherein the pad oxide layer is located over the silicon substrate;
- and
- removing the pad oxide layer, so that a top surface of the oxide material and a top surface of the island structures are coplanar, wherein each of the island structures further has a side surface and a rounded edge connected between the top surface and the side surface, and a radius of curvature of the rounded edge is equal or less than 2.3 nm.
Dependencies are inferred from the claim text.