Localized film stress modulation by implant
AssigneeApplied Materials, Inc.
InventorsXiaodong Yang, Scott Falk, Rajesh Prasad, Lizhong Sun
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Abstract
Embodiments herein are directed to localized stress modulation via ion implant to a nitride film. In some approaches, a nitride film may be formed over a substrate, a metrology scan of the nitride film may be performed to measure stress information of the nitride film at a plurality of locations, and ions may be directed to the nitride film during an ion implant. A dose of the ion implant may vary across the nitride film based on the stress information of the nitride film at each of the plurality of locations.
Claims19
A method, comprising:
- forming a nitride film over a substrate;
- performing a metrology scan of the nitride film to measure stress information of the nitride film at a plurality of locations;
- and
- directing ions to the nitride film during an ion implant, wherein a dose of the ion implant varies across the nitride film based on the stress information of the nitride film at each of the plurality of locations.
A method of modifying stress in an aluminum nitride film, the method comprising:
- forming the aluminum nitride film over a substrate;
- performing a metrology scan of the nitride film to measure stress information of the aluminum nitride film at a plurality of locations;
- and
- directing ions to the aluminum nitride film during an ion implant, wherein a dose of the ion implant varies across the aluminum nitride film based on the stress information of the aluminum nitride film at each of the plurality of locations.
An apparatus for film layer stress control, comprising:
- a beam scanner operable to scan an ion beam with respect to a substrate;
- and
- a controller, coupled to the beam scanner, the controller comprising:
- a processor;
- and
- a memory unit coupled to the processor, including a scan routine, the scan routine operative on the processor to performing a metrology scan to an aluminum nitride film formed atop the substrate to determine stress information at each of a plurality of locations of the aluminum nitride film, wherein the controller is further operable to:
- generate a dose pattern based on the stress information determined for each of the plurality of locations of the aluminum nitride film;
- and
- direct ions to the aluminum nitride film during an ion implant, wherein a dose of the ion implant varies across the aluminum nitride film based on the dose pattern.
Dependencies are inferred from the claim text.