Semiconductor device
AssigneesJapan Display Inc., Idemitsu Kosan Co., Ltd.
InventorsHajime Watakabe, Masashi Tsubuku, Toshinari Sasaki, Takaya Tamaru
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Abstract
A semiconductor device includes a oxide semiconductor layer provided on an insulating surface and having a channel area, a source area and a drain area sandwiching the channel area, a gate electrode opposite the channel area, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, wherein the gate electrode is an oxide conductive layer having the same composition as the oxide semiconductor layer, and the oxide conductive layer includes the same impurity element as the source area and the drain area.
Claims8
A semiconductor device comprising:
- an oxide semiconductor layer provided on an insulating surface and having a channel area, a source area and a drain area sandwiching the channel area;
- a gate electrode opposite the channel area;
- and
- a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, wherein
- a bottom surface of the gate electrode is in contact with the gate insulating layer,
- the gate electrode is an oxide conductive layer made of the same material and having the same composition as the oxide semiconductor layer,
- the oxide conductive layer, the source area, and the drain area include a same impurity element, and
- the oxide semiconductor layer and the oxide conductive layer have a polycrystalline structure.
Dependencies are inferred from the claim text.