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US 12,707,907 B2Granted
Control and localization of porosity in III-nitrides and methods of using and making thereof
AssigneeYale University
InventorsJung Han, Rami Elafandy
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Abstract
III-Nitride layers having spatially controlled regions or domains of porosities therein with tunable optical, electrical, and thermal properties are described herein. Also disclosed are methods for preparing and using such III-nitride layers.
Claims26
A III-nitride layer comprising one or more porous regions or domains within the III-nitride layer each comprising a plurality of pores;
- one or more non-porous regions or domains comprising ions implanted therein that reduce electrical conductivity of the one or more non-porous regions or domains;
- wherein the reduction of the electrical conductivity is sufficient to prevent porosification of the one or more non-porous regions or domains under electrochemical etching conditions;
- and
- wherein the reduction of the electrical conductivity is at least 10%, as compared to the electrical conductivity without the ions implanted therein.
1 more element
Dependencies are inferred from the claim text.