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US 2026/0304832 A1Published application
GaN TRENCH MOSFET AND FABRICATION METHOD
AssigneeSixPoint Materials, Inc.
InventorTadao HASHIMOTO
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Abstract
The present invention discloses a GaN trench MOSFET and its fabrication method. The GaN trench MOSFET of the current invention has an n-GaN region having both Mg and donor impurities below a trench bottom, extending to an n−-GaN drift layer. By utilizing multiple step ion implantations, an n-type GaN region is formed in Mg-doped p-GaN region below the trench bottom. Also, multiple steps of dry etching remove a portion of ion-implanted sidewall and enable formation of electron channel on the interface of p-GaN and oxide layer.
Claims11
A method of fabricating a GaN trench MOSFET comprising:
- (a) forming a trench in a p-type Mg-doped GaN layer of a medium which comprises an n−-GaN drift layer which is beneath the Mg-doped GaN layer and which is above a GaN substrate when the MOSFET is oriented vertically, wherein the trench has a bottom and sidewalls in the p-type Mg-doped GaN layer;
- (b) converting a region of the p-type Mg-doped GaN layer between the bottom of the trench and the drift layer into n-type conduction by donor ion implantation;
- (c) exposing angled surfaces of p-type Mg-doped GaN layer in the trench by partially etching the sidewalls;
- and
- (d) forming a source region of n-GaN outside of the trench.
2 more elements
Dependencies are inferred from the claim text.