H10P 30/28
Characterised by an annealing step
Official title: characterised by an annealing step, e.g. for activation of dopants
H10P30/28 (Characterised by an annealing step) appears on 2,130 US grants and 2,180 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,130
- Published applications
- 2,180
- Assignees
- 502
- Inventors
- 3,574
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 9 | 0 |
| 1978 | 7 | 0 |
| 1979 | 9 | 0 |
| 1980 | 9 | 0 |
| 1981 | 7 | 0 |
| 1982 | 7 | 0 |
| 1983 | 10 | 0 |
| 1984 | 10 | 0 |
| 1985 | 11 | 0 |
| 1986 | 11 | 0 |
| 1987 | 12 | 0 |
| 1988 | 9 | 0 |
| 1989 | 6 | 0 |
| 1990 | 5 | 0 |
| 1991 | 5 | 0 |
| 1992 | 10 | 0 |
| 1993 | 10 | 0 |
| 1994 | 12 | 0 |
| 1995 | 11 | 0 |
| 1996 | 4 | 0 |
| 1997 | 8 | 0 |
| 1998 | 15 | 0 |
| 1999 | 43 | 0 |
| 2000 | 43 | 0 |
| 2001 | 45 | 15 |
| 2002 | 50 | 29 |
| 2003 | 38 | 28 |
| 2004 | 42 | 69 |
| 2005 | 35 | 73 |
| 2006 | 57 | 72 |
| 2007 | 41 | 61 |
| 2008 | 30 | 117 |
| 2009 | 43 | 63 |
| 2010 | 78 | 79 |
| 2011 | 48 | 69 |
| 2012 | 55 | 76 |
| 2013 | 69 | 78 |
| 2014 | 75 | 81 |
| 2015 | 101 | 170 |
| 2016 | 152 | 170 |
| 2017 | 155 | 137 |
| 2018 | 118 | 122 |
| 2019 | 132 | 123 |
| 2020 | 99 | 98 |
| 2021 | 91 | 92 |
| 2022 | 69 | 95 |
| 2023 | 72 | 88 |
| 2024 | 60 | 83 |
| 2025 | 60 | 68 |
| 2026 | 31 | 24 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor device and manufacturing method thereof4 Aug 2026US 12,701,760 B2Taiwan Semiconductor Manufacturing Company.Ltd
- SiC MOSFET with reduced on-resistance4 Aug 2026US 12,701,761 B2Infineon Technologies AG
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- Substrate processing method, method of manufacturing semiconductor device, method of forming hard mask, substrate processing apparatus and non-transitory computer-readable recording medium13 Aug 2026US 2026/0239902 A1Kokusai Electric Corporation
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- Two-rotation gate-edge diode leakage reduction for mos6 Aug 2026US 2026/0231464 A1
Most cited
By later US patents
- Silicon carbide semiconductor device and method for producing the same641US 7,829,416 B2Panasonic Corporation · 2010
- Low temperature CVD process with selected stress of the CVD layer on CMOS devices559US 7,393,765 B2APPLIED Materials.Inc. · 2008
- Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing543US 7,109,098 B1APPLIED Materials.Inc. · 2006
- Multiple gate field-effect transistors having oxygen-scavenged gate stack305US 9,564,489 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Low temperature process for annealing shallow implanted N+/P junctions287US 4,522,657 AWestinghouse Electric Corp. · 1985