Insulated gate bipolar transistor with an electric field stop layer and preparation method thereof, and electronic device

An insulated gate bipolar transistor, comprising:

• a drift region;
• an electrode structure on one side of the drift region;
• and
• an electric field stop layer, wherein the electric field stop layer is arranged on one side of the drift region away from the electrode structure, the electric field stop layer comprises a first sublayer and a second sublayer laminated together over the drift region, the first sublayer is arranged close to the drift region, a junction depth of the first sublayer from a surface of the first sublayer away from the drift region to a surface of the first sublayer near to the drift region is greater than a junction depth of the second sublayer from a surface of the second sublayer away from the first sublayer to a surface of the second sublayer near to the first region, a peak value of a doping concentration of the first sublayer is less than a peak value of a doping concentration of the second sublayer, a slope of a doping concentration curve of the first sublayer is less than a slope of a doping concentration curve of the second sublayer, and the doping concentration curve of the first sublayer and the doping concentration curve of the second sublayer are continuous,
• wherein the junction depth of the first sublayer from the surface of the first sublayer away from the drift region to the surface of the first sublayer near to the drift region is 10-100 times the junction depth of the second sublayer from the surface of the second sublayer away from the first sublayer to the surface of the second sublayer near to the first region, the peak value of the doping concentration of the first sublayer is on the order of 1014, the doping concentration of the first sublayer has no more than two peak values, and the peak value of the doping concentration of the second sublayer is on the order of 1015-1016.