Substrate processing method, method of manufacturing semiconductor device, method of forming hard mask, substrate processing apparatus and non-transitory computer-readable recording medium

A method of manufacturing a semiconductor device, comprising:

• (a) forming a multilayer film of a predetermined thickness with a controlled grain size on a substrate by performing a cycle a predetermined number of times, and patterning the multilayer film to prepare the substrate provided with a patterned multilayer film, wherein the cycle comprises:
• (a-1) depositing a first film by exposing the substrate provided with a drift layer formed thereon to a source gas;
• and
• (a-2) exposing the substrate to a crystal growth inhibiting gas or a predetermined gas capable of forming a second film whose film quality is different from that of the first film;
• and
• (b) activating impurities by annealing the substrate after the impurities are implanted by an ion implantation using the patterned multilayer film as a hard mask.

A method of forming a hard mask for an ion implantation, comprising:

• forming a multilayer film whose thickness is within a range from 1 μm to 20 μm on a substrate by performing a cycle a predetermined number of times, wherein the cycle comprises:
• (a) depositing a first film which is polycrystalline or amorphous by exposing the substrate made of silicon carbide or gallium nitride to a source gas;
• and
• (b) exposing the substrate to a crystal growth inhibiting gas or a predetermined gas capable of forming a second film whose film quality is different from that of the first film,
• wherein two crystal grains of the first film separated by performing (b) are independent from each other.